PACKAGE MARKING 5AS Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

5Cs transistor

Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
Contextual Info: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package

marking 5bs

Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package

VSO05561

Abstract: 807W
Contextual Info: BC 807W, BC 808W PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Complementary types: BC 817W, BC 818W NPN 1 Pin Configuration VSO05561 Type Marking Package

VCXO reeves-hoffman

Contextual Info: DYNAMICS CORP OF AMERICA-. AM JD Ê j 3 G a D G M f l □□□□33G 3 |~ DISCRETE OVCXO’s 3 0 2 0 0 4 8 D Y N A M I C S C O R P OF AMERICA, PACKAGE STYLES T -S ô " I t i 84D 0 0 2 3 0' - 6-32 UNC x . .38 _L} 9.65 5ASKETED SCREW MARKING ON . THIS SURFACE

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As

MARKING 1B SOT23

Abstract: 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40
Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage 2
Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As

MT47H64M8BT

Contextual Info: UG64T6400L8SU-5ASKH Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR2 SDRAM Unbuffered SODIMM based on 8 pcs 64M x 8 DDR2 SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) 200-pin, small outline, dual in-line memory module (SODIMM)

Contextual Info: UG32T6400K8SU-5ASKH Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR2 SDRAM Unbuffered SODIMM based on 8 pcs 32M x 8 DDR2 SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) 200-pin, small outline, dual in-line memory module (SODIMM)

UG64T6400L8SU

Contextual Info: UG64T6400L8SU-5ASNS Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR2 SDRAM Unbuffered SODIMM based on 8 pcs 64M x 8 DDR2 SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) 200-pin, small outline, dual in-line memory module (SODIMM)

UG12T6400M8SU

Contextual Info: UG12T6400M8SU-5ASNS Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 200 Pin DDR2 SDRAM Unbuffered SODIMM based on 8 pcs 128M x 8 DDR2 SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View) 200-pin, small outline, dual in-line memory module (SODIMM)

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

transistor 5cs

Abstract: marking 5Cs BC807 BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC817
Contextual Info: BC807./BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN • Pb-free (RoHS compliant) package 1)

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC7003 Silicon NPN epitaxial planar type For low frequency output amplification Complementary to DSA7003 DSC8003 in MiniP3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC8003 Silicon NPN epitaxial planar type For low frequency output amplification DSC7003 in MT-2 through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC7003 Silicon NPN epitaxial planar type For low frequency output amplification Complementary to DSA7003 DSC8003 in MiniP3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)