PA18 Search Results

SAM7-H64

Abstract: PA26 PA13 PA27 PA10 PA11 PA12 PA15 PA16 pa-10
Contextual Info: SAM7-H64 BOARD HEADER ASSIGNMENTS PA1 PA3 PA5 PA7 PA9 PA11 PA13 PA15 PA17 PA19 EXT1 1 3 2 5 4 7 6 9 8 11 10 13 12 15 14 17 16 19 18 PA0 PA2 PA4 PA6 PA8 PA10 PA12 PA14 PA16 PA18 GND 5V-USB AD5 ADREF PA30 PA29 PA26 PA24 PA22 PA20 EXT2 38 36 34 32 30 28 26 24

Qbh-133

Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
Contextual Info: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717

PA18CSP20PA

Abstract: PA18CSP20NA PA18CSP20PAM1 APA18-RAR MB18A PA18CSP20NAM1 1PA18
Contextual Info: Photoelectrics Retro-reflective, Polarized Type PA18CSP20, DC, PBTP-housing • Range: 2.0 m • Modulated red light, polarized • Supply voltage: 10 to 40 VDC • Output: 200 mA NPN or PNP • Make and break switching functions, LED, indication • Protection: Reverse polarity, short-circuit, transients

con6a

Abstract: PA18ALD04TOM6SA CON 6A PA18ALD04TOSA AC12 AC140 PA18ALD04TCM6SA PA18ALD04TCSA APA18-RAR
Contextual Info: Photoelectrics Diffuse-reflective Type PA18ALD04T., AC, Metal-housing • Range: 400 mm adjustable • Modulated, infrared light • Supply voltage: 20 to 250 VAC • Output: 500 mA SCR • Make or break switching function, LED indication • High immunity to ambient light

ef12.6 core transformer

Abstract: ef12.6 transformers inductance transformer* EF12 PA2100NL
Contextual Info: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EF12.6 Platforms - SMT Power Range: Up to 13W Height: 10.2mm Max Footprint: 19.9mm x 14.2mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 PA1853NL 2-3

scr 6A

Abstract: NEC SCR PA18CLR30TO thyristor scr APA18-RAR MB18A PA18CLR30TC PA18CLR30TCM6 PA18CLR30TOM6 con6a
Contextual Info: Photoelectrics Retro-reflective Type PA18CLR30T, AC, PBTP housing • • • • • • • • Ordering Key Product Description The PA18CLR. is a family of inexpensive general purpose Retro-reflective sensors in industrial standard 18 mm cylindrical PBTP housing.

PA18CST10PA

Abstract: PA18CST10 PA18CST10M1 PA18CST10PAM1 APA18-RAR MB18A PA18CST10NA PA18CST10NAM1 ir tv receiver apa18r
Contextual Info: Photoelectrics Through-beam Type PA18CST10, DC, PBTP-housing • • • • • • Range: 10 m Modulated infrared light Supply voltage: 10-40 VDC Output: 200 mA NPN or PNP Make and break switching functions LED-indication for power supply ON emitter and

d1296

Abstract: PA1853
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and

Contextual Info: FLAT-PAK SERIES Model FP-PA18 18 W Audio Power Amplifier with Power Supply • • • • • • • • • • • • 18 Watts RMS into 8 Ω Automatic Energy-Saving Sleep Mode Selectable Sleep Delay: Off, 5, 15, 25 Minutes Input / Output Detachable Terminal Block Connections

UPA1856GR

Abstract: PA1856 PA1856GR-9JG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and

7032

Abstract: PA1894.271NL PA1894NL PA2080NL 221nl
Contextual Info: THT POWER INDUCTORS Power Beads - PA2080NL and PA1894NL Series Desktop/Server Vcore Inductors DCR Tolerance: ±4% Current Rating: Over 80Apk Inductance Range: 140nH to 330nH Height: 8.9mm Max PA2080NL , 10.0mm Max (PA1894NL) Footprint: 10.5mm x 7.5mm Max (PA2080NL)

PA1820

Abstract: g1627
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1820 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1820 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

d1273

Abstract: PA1851
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1851 is a switching device which can be driven directly by a 4.0-V power source. The µPA1851 features a low on-state resistance and

nec 2412

Abstract: PA1801
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1801 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1801 is a switching device which can be driven directly by a 2.5-V power source. The µPA1801 features a low on-state resistance and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1872 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

upa1817

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

pa1870

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1809 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1809 is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and

Contextual Info: Photoelectrics Through-beam Type PA18C.T., DC • • • • • • • • • • • Miniature sensor range Range: 20 m Axial , 16 m (Radial) Sensitivity adjustment by potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP, N.O + N.C.

PA1854

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

PA1804

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION This product is a switching device which can be driven 8 directly by a 4.5 V power source. 5 The µPA1804 features a low on-state resistance and

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1840 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING ORDERING INFORMATION DESCRIPTION The µPA1840 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage

PA18CAD10

Abstract: APA18-MB1 PA18CAD10PAM1SA EN60947-5-2 PA18 reflective sensor ir modulated 1" XM18
Contextual Info: Photoelectrics Diffuse-reflective Type PA18C.D., DC • • • • • • • • • • • Product Description The PA18CAD10. is part of a family of inexpensive general purpose diffuse reflective sensors in industrial standard 18 mm cylindrical ABS housing.

PA18CSR30PA

Abstract: PA18CSR30NA IEC 60068-2-32 PA18CSR30NAM1 PA18CSR30PAM1 IR Sensor simple continuous ir sensor simple circuit
Contextual Info: Photoelectrics Retro-reflective Type PA18CSR30., DC, PBTP-housing • • • • • • • • Product Description The PA18CSR. is a family of inexpensive general purpose Retro-reflective sensors in industrial standard 18 mm cylindrical PBTP housing. They are useful for simple