P1039 Search Results

XP1039-QJ

Abstract: P1039-QJ 6x6mm qfn 52 6x6
Contextual Info: 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN P1039-QJ October 2009 - Rev 08-Oct-09 Features 16.5 dB Small Signal Gain 49 dBm Third Order Intercept Point OIP3 4W Saturated RF Power Integrated Power Detector 6x6mm QFN Package, RoHS Compliant 100% RF Testing

XP1039-QJ

Abstract: 6x6mm
Contextual Info: 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN P1039-QJ January 2011 - Rev 06-Jan-11 Features 16.5 dB Small Signal Gain 49 dBm Third Order Intercept Point OIP3 4W Saturated RF Power Integrated Power Detector 6x6mm QFN Package, RoHS Compliant 100% RF Testing

Contextual Info: 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN P1039-QJ May 2008 - Rev 29-May-08 Features 16.5 dB Small Signal Gain 49 dBm Third Order Intercept Point OIP3 4W Saturated RF Power Integrated Power Detector 6x6mm QFN Package, RoHS Compliant 100% RF Testing

nec a1010

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PJ068

Abstract: PJ-068 Switchcraft 228 MT344B Switchcraft 12b 2P1509 P15823 MT342B Y235 S1230
Contextual Info: Switchcraft Previous Page | Return to Index | Next Page 1/4" FLAT PLUG PHONE PLUGS 1. Series 220 2. Series 230 3. Series S230 4. No. 238 click here to download a schematic drawing you will need to have Adobe Acrobat installed on your system to do this http://www.switchcraft.com/products/jack-137.html (1 of 4) [2/9/2005 4:24:29 PM]

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

C 829 transistor

Abstract: nec 1441 3906 npn lc 2581 v zo 107 NA P 938 nec 501 t
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1.5 dB TYP. @ Vce = 3 V, Ic = 7 mA, f = 2 GHz

IC 751 1124

Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE

DIODE S4 5AA

Abstract: Voltech PM1000 Application Note AN-42030 Voltech PM100 fluke 8050a autotransformer design 19195 fuse fluke 865 metal film fused resistor .47 ohm Variable AC voltage AutoTransformer
Contextual Info: www.fairchildsemi.com FEB109-001 User’s Guide 300 Watt Power Factor Corrected Supply Featured FSC Products: ML4821 www.fairchildsemi.com/FEBsupport 2005 Fairchild Semiconductor Page 1 of 15 Rev 1.0.3 March 2005 www.fairchildsemi.com Contents 1. General Board Description .3

713-102

Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

T88 NEC

Abstract: 2SC5191-T1B 2sc5191
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

Contextual Info: 4 D RAWING MADE THIS IN T H I R D DRAWING ANGLE PRO JECTIO N IS UNPUBLISHED COPYRIGHT 19 RELEASED BY AMP FOR INCORPORATED. ALL LOC ,19 PUBLICATIO N INTERNATIO NAL RIG H TS G RESERVED. DIST REVISIO NS 14 ZONE LTR DESCRIPTIO N DATE R E L E A S E D PER PR 9 8 - 5 9

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MT339

Abstract: T13631 IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies
Contextual Info: * Please visit the product pages on our website for the most up-to-date product information ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved

pt 8726 transistor

Abstract: 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING Units: mm • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

transistor marking S00

Abstract: nec 2412 nec 2035 728
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • PACKAGE DRAWINGS Unit: mm Low Voltage Operation, Low Phase Distortion • 2.8±0.2 Low Noise 1.5 NF = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RCA SK CROSS-REFERENCE

Abstract: LED Clock Display 94hb JP012S34B EHCAT62 WIRING diagram USB to rca CABLE MARKING C7F MIL-P-642 RF BASED HOME security SYSTEM ppt TT8642 mil spec relay catalog
Contextual Info: ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved to a larger facility at 1328 North Halsted Street in 1948, and

NEC 2561* D 431

Abstract: nec d 882 p transistor transistor transistor NEC b 882 p transistor NEC D 880 TD248 transistor NEC 2561 nec 2561 le NEC 2561 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR FEATU RES • • P A C K AG E D R A W IN G S Low Voltage O peration, Low Phase D istortion Low Noise N F = 1.5 dB TYP. IMF = 1.5 dB TYP. • Unit: mm @ V ce

NEC IC D 553 C

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1 .5 dB TYP. @ V c e = 3 V , Ic = 7 mA, f = 2 GHz

PJ-068

Abstract: PJ068 TIP 298
Contextual Info: Switchcraft 114" COMMERCIAL PHONE PLUGS - LITTEL-PLUG PLUGS 129 SWITCHCRAFT, INC. 5555 N. Elston Ave. • Chicago, il 60630 • 773 792-2700 • FAX: 773 792-2129 • www.switchcraft.com 1/4" COMMERCIAL PHONE PLUGS 2-CONDUCTOR LITTEL-PLUG PLUGS 3-CONDUCTOR LITTEL-PLUG® PLUGS

2N3233

Abstract: 2N3863 TO61 33-Df 2N3232 2N3234 2N3864 2N5873 2N5874 2N6315
Contextual Info: nnuiiq? A P T FLECTRONICS INC_ 26C 0 0 2 2 8 A P I E L E C T R O N I C S INC ’ 2b 0 "T^S3^0\ DE 1 0 0 4 3 5 ^ 5 □ □ □ O S S A □ C O L L E C T O R C U R R E N T = 7 AM PS N P N T Y PE S - CON TINUED D ev ice No C a se VCBO V o lts

2SC5193

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz