P1035 Search Results

XP1035-BD

Abstract: P1035-BD
Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that

Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that

P1035-QH

Abstract: XP1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035
Contextual Info: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH February 2010 - Rev 17-Feb-10 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description

XP1035-BD

Abstract: P1035-BD
Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD December 2007 - Rev 04-Dec-07 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The P1035-BD is a linear power amplifier that

P1035-QH

Abstract: XP1035-QH XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 xp1035
Contextual Info: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier

Contextual Info: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier

Contextual Info: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH August 2009 - Rev 29-Aug-09 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description The P1035-QH is a packaged linear power amplifier

P1035-QH

Abstract: XP1035-QH xp1035
Contextual Info: 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm P1035-QH December 2007 - Rev 12-Dec-07 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing General Description

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3355

Abstract: transistor 2sc3355 and application PA33 marking PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS

6852 d TRANSISTOR

Abstract: 2SC3357
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.

2SC3357

Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.

S56000

Abstract: CSP1035A CSP1034S DP2V90DX FSK 9600 DP2L17X t32c pll modem v.92 ITU-T V92 l-dp2l34x
Contextual Info: systems age re Product Brief Rev. 1 December 2004 DP2 Data Pump Chip Sets Features Introduction • Two-chip modem solutions: — DP2xxx in 48-pin TQFP. — CSP1034S in a 48-pin TQFP package or P1035A in a 48-pin TQFP package. The new DP2 fam ily of devices is designed to serve

Contextual Info: DC DC Part Num P10 - SERIES 10W HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltages * Output Voltages to 8000Vdc * Proportional Output Voltage * Efficiency 80% typ. * 5000 Vdc Output Isolation * Six-Sided Shielded Case * Continuous Short Circuit Protection

Norgren SM 900

Abstract: Norgren SM 960 norgren SM 9120 Norgren SM 920 J 6920 A 9175 norgren 950 norgren Norgren cM 930 P10228 30402
Contextual Info: RM/900 Standard Cylinder Non-magnet and Magnet Piston Double acting ∅ 1 1/4 inch to 14 inch ∅ 32 to 355 mm ● Ideal for a wide range of industrial applications ● Extensive range of mountings ● Rugged, reliable long established design Technical Data

2SC2351

Abstract: marking R2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5

marking PA33

Abstract: 2SC3582 PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-

2SC3356

Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

GE 2646

Abstract: 2SC3356 r25 CD/GE S 2646
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.

transistor 2sc3355 and application

Abstract: 2sc3355 2SC3355, npn
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking PA33

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage

nec 817

Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)