P-CHANNEL MOS SOT23 Search Results

BSS84 P

Abstract: BSS84 GSOT-23
Contextual Info: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features

sot89-3

Contextual Info: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection

XP152A01D8MR

Contextual Info: XP152A01D8MR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.48Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP152A01D8MR is a P-Channel Power MOS FET with low on-state

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

FET MARKING CODE

Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA-TF

Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Contextual Info: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

Contextual Info: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type

S-90P0222SUA

Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0332SUA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Contextual Info: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

BSH204

Abstract: ld smd transistor p-channel mos sot23 transistor SOT23 J5 SMD A8 Transistor transistor smd JR smd transistor LD smd transistor js smd transistor A8
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SMEET BSH204 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b Philips Sem iconductors 1997 Nov 26 PHILIPS Philips Semiconductors Objective specification P-channel enhancement mode

TRANSISTOR SMD MARKING CODE SP

Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL

Contextual Info: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement

TRANSISTOR SMD MARKING CODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD TRANSISTOR MARKING BR TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR MARKING DE K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE SP BSS84 Equivalent smd code marking sot23 marking A1 smd transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 18 2003 Aug 04 Philips Semiconductors Product specification P-channel enhancement mode vertical

TRANSISTOR smd FQ

Abstract: smd transistor sy
Contextual Info: philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH201 PINNING - SOT23 FEATURES • High-speed switching PIN SYMBOL • No secondary breakdown 1 g • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain DESCRIPTION

smd transistor LY

Abstract: transistor smd 303 smd transistor 304
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Direct interface to C-MOS, TTL, etc. 1 • High-speed switching 2 g s gate

Contextual Info: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor BSH202 FEATURES PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE SMD TRANSISTOR MARKING code DD TRANSISTOR SMD CODE PACKAGE SOT23 marking code UL SMD Transistor smd transistor marking br TRANSISTOR SMD MARKING CODE A1 transistor SMD DK TRANSISTOR SMD CODE 339 smd code marking 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE A1 BSS84 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE 339
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

02p SMD TRANSISTOR

Contextual Info: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application

BSH205

Contextual Info: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES BSH205 PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL, etc. 2 g s gate • Very low threshold.