P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Search Results

Contextual Info: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs

MPF970

Abstract: MPF971 MPF910
Contextual Info: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS

MFE4007

Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
Contextual Info: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types

BC264A

Abstract: BC264 BC264D IEC134
Contextual Info: 711GêBb Q0b745T T3b » P H I N BC264A to D yv N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors In a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment.

transistor BF245b

Abstract: BF245A BF245A/3 Transistor BF245A BF245C BF245A-B-C BB532
Contextual Info: b BE D WÊ bbiBTEM _N A P C / P H I L I P S DDTSST? 113 W Ê S I C 3 SEMICOND _ BF245A TO C J N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO -92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

marking code 513

Abstract: BF510 BF512 BF511 BF513 7Z96B8S
Contextual Info: • fafaS3*ï31 N AMER □Q2Mb21 7TD H A P X PHILIPS/DISCRETE b?E BF510 to 513 D A_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

Contextual Info: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit

2N5245

Abstract: 2N5247 2NS245
Contextual Info: TYPES 2NS245 THRU 2N5247 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 6810 9 1 7 , S E P T E M B E R 1968 N-CHANNEL SILECTf FIELD-EFFECT TRANSISTORS t FOR VHF AMPLIFIER AND MIXER APPLICATIONS High Power G a in . . . 10 dB Min at 400 MHz

BFR31

Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Contextual Info: • bb53T31 0025137 440 H A P X BFR30 BFR31 b?E D N AMER P H I L I P S / D I S C R E T E 7 V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

Contextual Info: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

2N4221 motorola

Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993
Contextual Info: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation

2N3330

Abstract: 2N3332 2N3331 2n3329
Contextual Info: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS

J175

Abstract: J174 J176 J177
Contextual Info: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

Contextual Info: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.

BFW11

Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
Contextual Info: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to

5T6449

Abstract: A5T6449 5T6450 8T6449
Contextual Info: TYPES A5T6449, A5T6450, A8T6449, A8T6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . P L -S 1 2 0 1 0 , M A Y 1 9 7 3 - R E V I S E D O C T O B E R 1 9 7 8 S ILE C T t HIGH-VOLTAGE FIELD-EFFECT TRANSISTORS

PJ99

Contextual Info: INTER F E T CORP 2bE D • 4äSbflöfl 00QG241 T ■ T 'Z '7 - * ^ rv 3 7 - 3 . S _ C4 P Channel JFETs SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrica! Characteristics at TA = 25°C VcSioni Viwucss i.i iG nA| Ul Vqs (V

PMBFJ174

Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD

2N5640 MOTOROLA

Abstract: Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970
Contextual Info: Transistors Field effect transistors M otorola offers a line o f field -effect transistors th at encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety o f junction FETs and M O S FE T s, w ith N- or P-channel polarity w ith both single and dual gates. These FETs include devices developed fo r operation

BSJ174

Abstract: BSJ176 BSJ175 BSJ177 IEC134 y 149
Contextual Info: r f N AMER P H I L I P S / D I S C R E T E - - T ~ bb5 3T31 G G I 7 2 5 7 •1 2SE D BSJ174 TO 177 T - 3 7 -2 5 " P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction F E T s in a plastic TO-92 envelope and intended for application

MFE2093

Abstract: MFE2095 MFE2094
Contextual Info: MFE2093 SILICON MFE2094 MFE2095 S T Y LE 3 P IN I. 3 2. 3. 4. DRAIN SOURCE GATE CASE LEAD Silicon N-channel junction field-effect transistors, designed for low-power audio-amplifier and switching applications. Drain and source interchangeable. CASE 20 (T O -7 2 )