P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Search Results

Contextual Info: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs

MPF970

Abstract: MPF971 MPF910
Contextual Info: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS

MFE4007

Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
Contextual Info: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types

BC264A

Abstract: BC264 BC264D IEC134
Contextual Info: 711GêBb Q0b745T T3b » P H I N BC264A to D yv N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors In a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment.

MFQ5460P

Abstract: 2N5460 DS46
Contextual Info: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)

PN4416

Abstract: BF98 BF991 BF998 BF909WR BF1105WR
Contextual Info: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications

2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters

transistor BF245b

Abstract: BF245A BF245A/3 Transistor BF245A BF245C BF245A-B-C BB532
Contextual Info: b BE D WÊ bbiBTEM _N A P C / P H I L I P S DDTSST? 113 W Ê S I C 3 SEMICOND _ BF245A TO C J N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO -92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

Contextual Info: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

Contextual Info: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

2n5460

Contextual Info: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

marking code 513

Abstract: BF510 BF512 BF511 BF513 7Z96B8S
Contextual Info: • fafaS3*ï31 N AMER □Q2Mb21 7TD H A P X PHILIPS/DISCRETE b?E BF510 to 513 D A_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

philips bsd215

Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment

2N3993

Abstract: 1450 transistor
Contextual Info: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

2N5245

Abstract: 2N5247 2NS245
Contextual Info: TYPES 2NS245 THRU 2N5247 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 6810 9 1 7 , S E P T E M B E R 1968 N-CHANNEL SILECTf FIELD-EFFECT TRANSISTORS t FOR VHF AMPLIFIER AND MIXER APPLICATIONS High Power G a in . . . 10 dB Min at 400 MHz

BFR31

Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Contextual Info: • bb53T31 0025137 440 H A P X BFR30 BFR31 b?E D N AMER P H I L I P S / D I S C R E T E 7 V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

2sk152 equivalent

Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

Contextual Info: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

2N4221 motorola

Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993
Contextual Info: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation

2N5949

Abstract: 2n5961
Contextual Info: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications

2N3330

Abstract: 2N3332 2N3331 2n3329
Contextual Info: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS