P-CHANNEL 200V MOS FET Search Results

Contextual Info: PRODUCT CÂTÂIO' Æ lltro n P-CHANNEL ENHANCEMENT MOS FET -200V,-6.5A. 0.8n SDF9230 SDF9230 SDF9230 FEATURES • • • • • • • • ABSOLUTE MAXIMUM RATINGS PARAMETER JAA JAB JDA RUGGED PACKAGE HI -REL CONSTRUCTION CERAMIC EYELETS:JAA.JAB LEAD BENDING OPTIONS

IRF220 equivalent

Abstract: IRF220 QDD0305 T-39
Contextual Info: 8 3 6 8 6 02 S O L IT R O N D E V IC E S INC f iB b a b P g □ □ □ 0 3 0 0 3 T-39-11 Solitron_ D E V IC E S , , * c . p 0 W E R ^ o s SFK204A3 D E V |G E 200V/5A N Channel, TO-3 Package, IRF220 equivalent The new S.olitron Power MOS technology combines the efficient

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

MP6101

Abstract: n channel fet array
Contextual Info: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W

2SJ406

Contextual Info: 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C

2SJ457

Contextual Info: 2SJ457 P- Channel Silicon MOS FET Very High-speed Switching. TENTATIVE Features and Applications • High-speed diode built-in. • Very high-speed switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC

2SK2474

Contextual Info: Panasonic P ow er F-M O S FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 5.3+0.1 • Features • Low ON-resistance RDS on • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings Param eter Drain-Source breakdown voltage

2SK2083

Abstract: bx090
Contextual Info: Ordering num ber:EN 4617 _ 2SK2083 No.4617 N-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance • Very high-speed switching •Micaless package facilitating mounting Absolute Maximum R atings at Ta = 25°C

2SK258

Abstract: 2SK2588 HITACHI 2SK* TO-3
Contextual Info: b liE D MMTbEDS G0130E0 014 • H I T 4 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed S w itc h in g . • H igh C u to ff Frequency. • E nhancem ent-M ode. •

2SK511

Abstract: 296 mos fet ED44
Contextual Info: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.

2SK2580

Abstract: 2sk258 HITACHI 2SK* TO-3 vm200
Contextual Info: b liE D M M T b E D S G 0 1 3 0 E 0 014 • H I T 4 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed S w itc h in g . • H igh C u to ff Frequency. • E nhancem ent-M ode.

Contextual Info: Transistors Switching 300V, 16A 2SK2739 • F e a tu re s •E x te r n a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area), 4) G ate-source voltage guaranteed at Vgss = ± 3 0 V 5) Easily designed drive circuits.

TC2320TG-G

Abstract: 125OC 27BSC TC2320 TC2320TG
Contextual Info: TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode normally-off

gutre

Abstract: 2SK1449
Contextual Info: Ordering n u m b e r:EN 3452 2SK1449 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum Ratings at Ta = 25°C Drain to Source Voltage VdSS Gate to Source Voltage

ultrasound transducer circuit driver 1mhz

Abstract: TC6320 TC6320TG-G p-channel 200V Piezoelectric 1Mhz 125OC 27BSC TC6320TG gate-source zener
Contextual Info: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage low threshold N-channel and P-channel MOSFETs in an SO8 package. Both MOSFETs have integrated gate-source

SKP202

Contextual Info: N-Channel MOS FET SKP202 •Features March. 2007 ■Package-TO-263 ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D 2 G (1) S (3) ■Absolute maximum ratings

fkp202

Contextual Info: N-Channel MOS FET FKP202 •Features March. 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)

2U 73 diode

Contextual Info: 73 HITACHI/-COPTOELECTRONICS} 449b2Ub H i I A U H 1 / COP f U h L E C T K U N 1 U S 2SK412 D e J M 4 cib5üS □ □ 1 0 0 5 1 7 73C 10059 ' D T - 3 ? “/3 - SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER • FEATURES

RDN150N20

Abstract: 100V 100A mos fet
Contextual Info: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

2SK2161

Contextual Info: Ordering num ber: EN 4601A 2SK2161 NO.4601A N-Channel MOS Silicon FET Very High-Speed Switching Applications I F eatu res • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Micaless package facilitating mounting. bsolute M axim um R atings at Ta = 25°C

2SK1463

Abstract: T03P 5s20 S 10 S T
Contextual Info: Ordering number: EN 34 6 6 _ 2SK1463 N-Channel MOS Silicon FET Very High-Speed Sw itching A pplications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute Maximum Ratings at T a= 25°C Drain to Source Voltage

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

2SK1441

Contextual Info: O rd e rin g n u m b e r:E N 3444 No. 3444 _2SK144Ì N-Channel MOS Silicon FET Very High-Speed Switching Applications rFeatures etu u res • Low ON-state resistance. • Very high-speed switching. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage

2SK1412

Contextual Info: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.