P N JUNCTION Search Results

Contextual Info: 1 N 4 3 83 G P thru 1 N 4385G P 1 N 4 5 85 G P and 1 N 4586G P I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . GLASS PASSIVATED JUNCTION PLASTIC RECTIFIERS VO LTA G E - 200 TO 1000 Volts CURRENT - 1.0 Ampere FEATURES M ECH ANICAL DATA • P la stic Package carries U n de rw riters

MPF256

Abstract: field-effect transistor
Contextual Info: MPF256 silicon Advance Information JUNCTION FIELD-EFFECT TRANSISTOR SILICON IM-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S IL IC O N N -C H A N N E L . . . d e p le tio n m ode ju n c tio n fie ld -e ffe c t tra n s is to r designed f o r lo w nois* general a m p lifie r a p p lic a tio n s .

A659

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK210 U n it in m m F M T U N E R A P P L IC A T IO N S . t-Üft 2.£-Q3 V H F B A N D A M P L IF IE R A P P L IC A T IO N S . + Q.2 r> l. b - Q i 5 • H ig h P o w er G a in : G p s = 24dB Typ. ( f = 100M H z)

2Sd114

Abstract: ALY TRANSISTOR 2SD113 transistor ALY 2SD114-O AC73
Contextual Info: v U 3 > N P N t a m è & b v 's it z t r 2SD113, 2SD114 SILICON NPN DIFFUSED JUNCTION TRANSISTOR » « h u b I n d u s tr ia l A p p lic a t io n s v + x fm o o DC—DC:a a b — 0 A u d io P o w e r A m p lifie r P o w e r S w itc h in g A p p lic a tio n ,

2SK72

Abstract: 2SK49 ISS400 iss 400 2SK72 C differential amplifier application transistor 2sk49
Contextual Info: ICON N-CHANNEL JUNCTION DUAL FIELD EFFECT TRANSISTOR a ft i i ffl INDUSTRIAL APPLICATIONS U n it o ¡¿aiOHAX. D i f f e r e n t i a l A m plifier A p p l i c a t i o n Ö ß l f i Ä r - t : N ? = C L 5 d B T y p . 0a5OMAX. CRg = 1 0 0 k n . Vn p -P = 1 7 # ( Typ.)

CM75TF-12H

Abstract: m4 12h igbt mitsubishi cm75tf-12h
Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM50TF-28H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM50TF-28H

Abstract: igbt 800v 50a aa 118 diode
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M L B J Y DIA. (4 TYP.) AA L TAB #110, t = 0.5

CM50TF-24H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM100TF-12H

Abstract: m4 12h
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

Contextual Info: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN

BCX78

Abstract: BCX79 BCX58 BCX59
Contextual Info: BCX78 BCX79 J . PHILIPS i n t e r n a t i o n a l SbE ]> 711Gö2b 0042004 10S M P H I N P-N-P SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 2 7 " # 6? P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59.

Contextual Info: LTC2205-14 14-Bit, 65Msps ADC DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps 78.3dB SNR and 98dB SFDR 2.25VP-P Range SFDR >90dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H

G86 770 A2

Abstract: MABAES0060 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 LTC2204 rf transistor 2.5GHz 33D9
Contextual Info: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTIO U FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H

2SK19

Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Contextual Info: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

BCX58

Abstract: BCX59 BCX78 BCX79 bcx58 transistors
Contextual Info: BCX58 BCX59 PHILIPS INTERNATIONAL SbE D Bi 711002b 0042000 SbT « P H I N T -2-7-0^ N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA

2sa1197

Abstract: 2SC386A 6266A MO-160 2SC386 DA86
Contextual Info: O r d e r i n g n u m b e r : EN 2107A 2SA1497/2SC3860 P N P /N P N E p itax ial P la n a r Silicon T ra n sis to rs Sw itching Applications w ith Bias Resistance j Applications / ^ . Switching circuits, Inverter circuits, interface circuiti, dr*i¥ Features

2SB82

Abstract: 2SB828 722G ic b82 V05E
Contextual Info: Ordering number: EN 722G 2SB828/2SD1064 N0.722G SASiYO P N P /N P N E pitaxial P lanar Silicon Transistors 50V/12A Switching Applications 1 A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current

Contextual Info: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78

2sd439

Abstract: 2SB559
Contextual Info: 2SB559 E pitaxial P lanar S ilic o n T ra n sisto rs P N P /n p n 2009A 2SD439 P372E Low Frequency Power Am p, Medium Speed Switching Applications Matures . Large allowable collector dissipation and wide ASO. . Low saturation voltage and good linearity of hFE.

B170007

Abstract: b176 BUY13 MHT7603 B170002 MHT7609 B170005 B170008 SDT8115 SDT8111
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. G E R M A N I U M P N P 1 9 G E R M A N I U M N P N 1 10 . SIL I C O N P N P 1 1 . SIL IC O N N P N LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

7216A

Abstract: EN210 2SC3864 2SA1503
Contextual Info: Ordering num ber:E N 2 1 0 9 A 2SA1503/2SC3864 P N P /N P N E p ita x ia l P la n a r S ilic o n T r a n s is to r s SA i YO Sw itching A pplications w ith Bias Resistance i Applications ♦ Switching circuits, inverter circuits, interface circuits > dliverl

BFW30

Abstract: BFW 30
Contextual Info: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers