P CHANNEL MOSFET 10A SCHEMATIC Search Results

Mosfet

Abstract: SSF3615
Contextual Info: SSF3615 30V P-Channel MOSFET D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =- 30V,ID =-10A

SUD40N04-10A

Contextual Info: SPICE Device Model SUD40N04-10A Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

STS10PF30L

Contextual Info: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STS10PF30L • ■ ■ VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS10PF30L

Contextual Info: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET Table 1: General Features TYPE STS10PF30L • ■ ■ Figure 1:Package VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

S10PF30L

Abstract: STS10PF30L sts10p
Contextual Info: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET Table 1: General Features TYPE STS10PF30L • ■ ■ Figure 1:Package VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

P4413

Abstract: p4413ls P4413L
Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • NEW PRODUCT -30V Mechanical Data Description and Applications

Contextual Info: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features VDSS @Tjmax Type RDS(on) ID ) s ( t c u d o ) r s ( P t c Description e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t b Applications c u O

Contextual Info: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • N EW PRODU CT -30V Mechanical Data Description and Applications

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features RDS ON max ID max TA = 25°C 8.6mΩ @ VGS = -4.5V -12A V(BR)DSS -20V 11mΩ @ VGS = -2.5V -10A 15mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance

PowerDI3333-8

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 9mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 12mΩ @ VGS = -2.5V -10A 16mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance

dpak mosfet motor control DC

Abstract: STD10PF06 STD10PF06 equivalent TO252 dpak mosfet
Contextual Info: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 8mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • • • • • • Mechanical Data

Contextual Info: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8mΩ @ VGS = -4.5V -12A 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8m @ VGS = -4.5V -12A 9.8m @ VGS = -2.5V -10A 13m @ VGS = -1.8V -9.3A 17m @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized

2SK1818-MR

Contextual Info: 2SK1818-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Features Outline Drawings Include fast recovery diode TO-220F15 High voltage Low driving power Applications Motor controllers Inverters Choppers 2.54 3. Source JEDEC EIAJ SC-67 Equivalent circuit schematic

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

SC2420ISW

Abstract: NPN 1.5 AMPS POWER TRANSISTOR
Contextual Info: SC2420 BI-Phase/Dual Controller POWER MANAGEMENT Description Features The SC2420 can be configured as a dual converter or a bi-phase converter for high current applications. The part is designed for point of use power supplies with 8.5-14V nominal backplane power sources. The power dissipation is controlled using a novel low voltage supply technique, allowing high speed and integration, with the high

77206-A7

Abstract: Magnetics 77206-A7 SC2420ISW 1N5819M 30BQ040 FDB7030BL SC2420 SC2420ISWTR 680uF 35V Schottky melf
Contextual Info: SC2420 BI-Phase/Dual Controller POWER MANAGEMENT Description Features The SC2420 can be configured as a dual converter or a bi-phase converter for high current applications. The part is designed for point of use power supplies with 10-14V nominal backplane power sources. The power dissipation is controlled using a novel low voltage supply technique, allowing high speed and integration, with the high

P channel MOSFET 10A schematic

Abstract: N and P MOSFET
Contextual Info: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

P channel MOSFET 10A schematic

Abstract: 2SK1086-MR 2sk1086 2sk1086 25 2sk1086m 2SK108
Contextual Info: 2SK1086-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

2SK1822-01MR

Abstract: 2sk1822
Contextual Info: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15

LR 2703

Abstract: capacitor .47mf capacitor 47MF lr2703 panasonic diode capacitor 47MF 16v D05022P D05022P-332HC D03316p-102 capacitor 12v 33MF
Contextual Info: IRDC3046 IRU3046 EVALUATION BOARD USER GUIDE INTRODUCTION SPECIFICATION DATA The IRU3046 IC combines a dual synchronous PWM controller and a linear regulator controller, providing a cost-effective, high performance and flexible solution for multi-output applications. The dual synchronous controller can be configured as 2-independent or 2-phase controller. In 2-phase configuration, the IRU3046 provides

2SK1817-MR

Contextual Info: 2SK1817-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier