223FI Search Results

DDD4425

Abstract: DDD4432 DDD443D
Contextual Info: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

ESAC92-03

Abstract: esac92
Contextual Info: ESAC92-03 10A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ¿3 6 • 0 ? Connection Diagram ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

750a

Contextual Info: 1MBI750LN-060 750A Fuji Power Module IGBT MODULE ( L series) • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p plications • High Current for Motor Drive, such as Electric Vehicle • High Current Inverter • Uninterruptible Power Supply

1ZFL

Abstract: ERB91-02 ERB91
Contextual Info: ERB91-02 1A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ■ Marking ■ Features • Lo w V f Color code : Silver • Super high speed switching • High reliability by planer design Abridged type name Voltage class ■ Applications

DDD421S

Contextual Info: X SPEC 1 F 1 CATI ON DEVICE NAME : I G BT TYPE NAME : 1MB 3 0 - SPEC. No. ; DATE : 0 6 0 M S 5 F 3 5 2 3 J u n .-2 5 -1 9 9 6 F u j i T h is S p e c ific a tio n DATE DRAW N CHECKED NAME E l e c t r i c C o. L td. is s u b je c t to change w ith o ut not ice.

ESJA52-10A

Abstract: 00047-5-1
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage sili con d iode ESJA52-1OA made by FLU I ELECTR1C CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION His diode shall be marked with Cathode Mark and Lot No.

ERC80M-004

Abstract: 8f diode
Contextual Info: ERC80M-004 5 a S C H O T T K Y BARRIER DIODE : Features • S i* ''* £ * * £ Insulated package by fu lly m o ld in g . • te V F Low V F C onnection D iagram S uper hig h speed s w itc h in g . H ig h re lia b ility b y p la n e r d e s ig n . : A pplications

FUJI IGBT 100A

Contextual Info: 2-Pack IGBT 1200 V 100 A FUJI IGBT MODULE L series O utline D raw ings • Features • High Speed Sw itching • Low Saturation Voltage • Voltage Drive ■ A p p lic a tio n s • Inverter for Motor Drive • AC and DC Servo Drive Am plifier • Uninterruptible Power Supply

6mbp75ra060

Abstract: IGBT FF 300 MTT 95 A 12 N KAE x1 MTT 65 A 12 N 300V power amplifier JT-100
Contextual Info: O U U V /Z O A /O in one-package I G B T - I P M M • *8 R s e r i e s 6MBP75RA060 Features • f e m & t 'j- y • IP M -N '> V- X t 5 & 1 4 0 & -3 A- > >r - v • I G B T * 7 7<D Tj t t U a S f t f t K t t f f i C : J: 5 « • rt $ iJ ® [U K W g S o aQ^ S W * i | i i ^ j ^ l c i

P channel MOSFET 10A schematic

Abstract: N and P MOSFET
Contextual Info: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR

6MBP100NA060

Abstract: 6MBP100NA060-01 555 igbt driver Tra 1120 r
Contextual Info: . l , ì • „ ± I G M $ B T - I P N y , 6 0 0 V U - 7 6 M / 1 0 0 A B P 1 / 6 N A ® 6 - 1 Features • V7 ■ M . v -igy-f X \ ‘ r ljia $ § 1 4 • Low switching-surge and noise • Low power loss • High reliability ■ Maximum ratings and characteristics

Contextual Info: J. SPECI F 1CAT 10 N DEVICE NAME : TYPE NAME : 1 M B H 2 5 - 1 20 SPEC. No. : M S 5 F 3 5 3 1 DATE : Jun. -25-1996 1G BT F u j i E l e c t r i c C o. Ltd. T h is S p e c if ic a t io n is su b je c t to change w ithout n otice. N AM E DATE APPROVED DRAWN