P CHANNEL 50A IGBT Search Results

APT50GF100BN

Abstract: 780L
Contextual Info: ADVANCED POWER TECHNOLOGY LIE D • DeSTIGT OOOOflm 2fiS ■ AVP A dvanced P o w er Te c h n o l o g y APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings:

Contextual Info: VDSS ID25 IXTH50P10 IXTT50P10 Standard Power MOSFET = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH50P10

Abstract: P-CHANNEL 25A TO-247 POWER MOSFET IXTT50P10 50P10
Contextual Info: Standard Power MOSFET IXTH50P10 IXTT50P10 VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)

APT50GL60BN

Abstract: 25CC
Contextual Info: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

MG50J2YS50

Abstract: transistor te 2305 mg50j V20-H IGBT MG50J2YS50
Contextual Info: TOSHIBA MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FA ST -O N -TA B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

P channel 50A IGBT

Contextual Info: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector

Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

P channel 600v 50a IGBT

Abstract: P channel 600v 30a IGBT P channel 50A IGBT MIG50J904H
Contextual Info: TOSHIBA TENTATIVE MIG50J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. Output Inverter Stage

Contextual Info: TOSHIBA TENTATIVE MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q 6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0 .3 /iS Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.

P channel 50A IGBT

Contextual Info: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

la7200

Abstract: MG50N2YS
Contextual Info: MG50N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5<Js(Max.) . Low Saturation Voltage: VcE(sat)= 5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One

Contextual Info: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: TOSHIBA MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i R O M Y<;<5il HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One

td 4950

Abstract: MG50J6ES50
Contextual Info: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

P channel 50A IGBT

Abstract: isolated voltage sensor 1mhz diode bridge BY 26 CV MSK4351 IGBT 500V 50A use igbt for 3 phase induction motor Bv 42 transistor
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

DC MOTOR CONTROL IGBT

Abstract: ES50A
Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG50N2YS9

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf "1. 0/is Max. trr=0.5us(Max.) . Low Saturation Voltage: (sat:)~5.OV(Max .) . Enhancement-Mode . includes a CompLete Half Bridge in One

on semiconductor 50-5G

Contextual Info: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE m n SILICON N CHANNEL IGBT i f i F <; ç n HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance, 6 IGBTs Built Into 1 Package. Enhancement-Mode.

DIODE JS

Abstract: MG50H2YS1
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG50H2YS1 HIGH POWER S W I T C H I N G A P P LICATIONS. M O T O R CONT R O L APPLICATIONS. FEATURES: . High In p u t Impedance . High Speed . . . . : t f =1. Ojjs Max. t r r = 0 .5 ms (Ma x .) Low S a t u r a t i o n V o lta g e : VcE ( s a t ) = 5 . OV (M;