P 471 MOSFET Search Results

NTD18N06

Abstract: NTD30N02
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 32 110 Max Rating Config. Page No. NTD110N02R

MMSD914LT1

Abstract: 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 471 2A, 200KHZ HIGH VOLTAGE BUCK CONVERTER LT3430 DESCRIPTION Demonstration circuit 471 is a 60V, 200kHz, 2A load current, monolithic step-down DC/DC switching converter using the LT3430. With its wide input voltage range, 3A internal power

SSD50N08-14D

Abstract: MosFET
Contextual Info: SSD50N08-14D 55A, 80V, RDS ON 11mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

NTC 10D-9

Abstract: FAN7527 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor
Contextual Info: www.fairchildsemi.com Application Note AN4107 Design of Power Factor Correction Using FAN7527 1. Introduction power factor is obtained. The FAN7527 is an active power factor correction PFC controller for boost PFC application which operates in the critical conduction mode. It turns on MOSFET when the

diode bridge bd1 4a 600V

Abstract: 103 Variable resistor p 471 mosfet 10D09 CM330060 EI2519 EI3026 EI-3530 EI-3026 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the

IRF640a

Abstract: p 471 mosfet
Contextual Info: IRF640A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS= 200V

0.22UF 275VAC CAPACITOR

Abstract: 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 FAN7527B 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530
Contextual Info: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the

SSS5N80

Abstract: 250M SSS5N70
Contextual Info: N-CHANNEL POWER MOSFETS SSS5N80/70 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

BF2201N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L ine MMBF2201NT1 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single N -C tiannel Field E ffect Transistors THdJ Part of the GreenLine Portfolio of devices with energy-con­ serving traits.

SSS4N60

Abstract: SSS4N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS4N60/55 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

iran

Abstract: SMP40N10 b0606 D5040
Contextual Info: T e m ic SiHconix_ SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V ISR I)SS (V) 100 I d (A) 40 ;r DS(onj (£2) 0.040 TO-22ÜAB o DRAIN connected to TAB o GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

irl520

Abstract: p 471 mosfet IRL521 IRL520/IRL521
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL520/IRL521 FEATURES • Low er R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysillcon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability

Contextual Info: HS-2100RH Data Sheet Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Harris HIP2500 and the industry standard 2110 types. The low-side and

VJ0805

Abstract: VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225 NF223
Contextual Info: VJ OMD Series Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications. • Excellent reliability and thermal shock

KTK2312

Contextual Info: SEMICONDUCTOR KTK2312 T E C H N IC A L D A T A SILICON N CHANNEL MOSFET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS FEATURES • 4V Gate Drive. • Low Drain-Source ON Resistance • RDS ON -13mß (Typ.)

U540

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1UM-16A HIGH-SPEED SWITCHING USE FS1UM-16A OUTLINE DRAWING Dimensions in mm , 4.5 # • V dss . 8 0 0 V 1 2 3 .4) GATE DRAIN SOURCE DRAIN • TDS ON) (MAX) . 1 2 .3 0

30N15

Contextual Info: RFH30N12 RFH30N15 ¡2 H a r r is N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Package Features T O -2 1 8 A C TOP VIEW • 30A, 120V and 150V • rDS on = 0 .0 75 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

irfbf30

Abstract: Diode IOR 10 dc
Contextual Info: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS

Three-terminal Off-line PWM Switch

Abstract: EST TL431 top200yai TOP214YAI TOP202 transistor top200yai top200y AN-14 topswitch top201yai TOP203YAI
Contextual Info: T O P 2 0 0 - 4 / 1 4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on

Contextual Info: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a

Contextual Info: Analog Power AM90N08-10B N-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V ID(A) 90a Typical Applications:

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE FS10VSJ-06 OUTLINE DRAWING Dimensions in mm * -.2 -.4; • 4V DRIVE • Vdss .60V <\| 4 drain • rDS ON (MAX) . 7 0 m Q

Contextual Info: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock

Contextual Info: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock