OXY POWER Search Results

V-763-OXY

Abstract: 760nm multi mode vcsel oxy power AVAP760 CLASS III-A LASER
Contextual Info: AVAP 760 SPECDILAS V-763-OXY 760nm Single-mode VCSEL AVAP 760 series SPECDILAS V-763-OXY diagrams (typical characteristics) Spectrum TC = 2 5 ° C Output intensity [20dB/div] PO = 0 . 4 m W PO = 0 . 3 m W PO = 0 . 2 m W 754 756 Features 762 764 766 Current tuning

Contextual Info: SPECDILAS V-Series SPECDILAS V-763-OXY-MTE General Specifications - no mode hopping - singlemode 20 dB suppression - circular beam profile - low beam divergence - VCSEL technology - AR-coated windows 0,03 Applications: - Reference laser 0,03 - HeNe laser replacement

Contextual Info: Preliminary SPECDILAS V-Series SPECDILAS V-763-OXY-MTE 2 General Specifications - no mode hopping 0,255 - singlemode 20 dB suppression - circular beam profile - low beam divergence - VCSEL technology - AR-coated windows 0,03 Applications: - Reference laser

SICTE-12

Abstract: SICTE12
Contextual Info: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­

o2-a2

Abstract: O2-A2 Oxygen Sensor Alphasense oxygen O2-A2 SO2-BF GAS SENSOR for oxygen Alphasense CO-BF so2 sensor datasheet cl2-b1 M339
Contextual Info: α Technical Specification S 4 to 20 mA T ds ffor or Trransmitter Boar Boards Alphasense “B” T ype T oxic & ““A A” type Oxy gen Sensor s Type To Oxyg Sensors PATENT PENDING Figure 1 Toxic and Oxygen Transmitter Boards Toxic Transmitter Oxygen Transmitter

Contextual Info: SHARP PT361/PT361F Com pact Type Intermediate Acceptance Phototransistor PT361/PT361F OutSne Dimensions • Features U n it : m m 1. 03.2m m com pact ep oxy resin package 2. High sensitivity ¿ 3 .2 ±a2 (It ■ M IN . 0.1mA at Ev = 21x) 3. Interm ediate acceptance ( A # : T Y P . ±20°)

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface

CYM9270

Abstract: CYM9271B CYM9272A CYM9273 R2351
Contextual Info: CYM9270 CYM9271B CYM9272A CYM9273 ’# CYPRESS 64K x 128K x 256K x 512K x Features 36 36 36 36 SRAM SRAM SRAM SRAM Module Module Module Module 9273 in p lastic surface m ount packages on an ep oxy lam i­ nate board w ith pins. T he m odules are desig ned to be in cor­

Contextual Info: fax id: 2049 ^C YPR ESS PRELIMINARY C YM 1831V33 64K x 32 3.3V Static RAM Module Features ule is co n stru cte d from tw o 64K x 16 S R A M s in SO J packages m ounted on an ep oxy lam inate substrate. Four chip selects are used to inde pen de ntly en ab le the four bytes. Reading or

Contextual Info: C YM 1841V33 256K x 32 3.3V Static RAM Module Features ule is con stru cted from tw o 2 5 6 K x 16 S R A M s in SO J p a cka g ­ es m ounted on an ep oxy lam inate substrate. Four C hip S elects are used to in de pen de ntly en ab le th e four bytes. Reading or

Contextual Info: — .135 .115 13.431 12.921 .040 MAX. [ 1.021 EP OXY MENISCUS ATHODE — .026 MAX. [ 0. 66] .95 MIN. [2 4 .1] 250 [ 6 , 3 5 1 220 [ 5 , 5 8 1 O P E R A T I N G C H A R A C T E R I S T I C S AT 25°C A M BIE N T MIN. LED CHARACTERISTICS LUMINOUS INTENSITY TYP.

SOL18

Abstract: SOL-18 sol18 package MLT04GS "Analog Multiplier" analog multiplier analog multipliers MLT04 MLT04GBC MLT04GP
Contextual Info: ANALOG ► DEVICES Four-Channel, Four-Quadrant Analog Multiplier MLT04 FU N C T IO N A L B L O C K D IA G R A M 18-L ead E p oxy D IP P S u ffix 18-L ead W id e B ody SO IC (S Suffix) FEATURES Four Independent Channels Voltage IN, V oltage O U T No External Parts Required

Contextual Info: V CYPRESS PRELIMINARY 512K x 32 3.3V Static RAM Module m odule is co n stru cte d from four 5 1 2K x 8 S R A M s in SO J p a ck­ ages m ounted on an ep oxy lam inate substrate. Four chip s e ­ lects are used to in de p e n d e n tly en ab le the four bytes. R eading

Contextual Info: fax id: 2050 ^C YPR ESS PRELIMINARY C YM 1841V33 256K x 32 3.3V Static RAM Module Features ule is co n stru cte d from tw o 2 5 6 K x 16 S R A M s in SO J p a cka g ­ es m ounted on an ep oxy lam inate substrate. Four chip selects are used to in de pen de ntly en ab le the four bytes. R eading or

HVM12 diode

Abstract: diode HVM12 HVM05 HVM12 350 214B HVM08 HVM10 HVM12 HVM14 HVM15
Contextual Info: I nternational HVM SERIES S em ico nducto r , I n c . HIGH VOLTAGE POWER RECTIFIER FEATURES: High P o w e r A v a la n c h e G ra d e S ilic o n E p oxy E n c a p s u la te d N ote: A v a rie ty o f te rm in a tio n s are a va ila b le . The d ista n ce b etw een th e e nd o f th e te rm in a tio n and th e end o f

Contextual Info: HYM72V16M656T6 1SUx64,16Mx16 based, PC100 DESCRIPTION T h e H Y M 72 V 1 6 M 65 6 T 6 -S e rie s are high speed 3 .3 -V o lt S yn ch ro n o us D R A M M odules com posed o f fo u r 16M x16 bit S yn chronous D R AM s in 54-pln TS O P II and 8-pin T S S O P 2K b it E E P R O M on a 144-pin Zlg Z a g D ual pin glass-e p oxy

Contextual Info: HYM72V32M656T6 32Mx64, 16Mx16 based, PC100 DESCRIPTION The H Y M 72V 32M 656T6 S eries a re high speed 3 .3 -V o lt S yn ch ro n o us DRAM M odules co m posed o f e ig h t 16M x16 bit Syn ch ro n o us D R A M s in 54-pin TS O P II and 8-pin T S S O P 2K b it E E P R O M on a 144-pin Zig Z a g D ual pin gla ss-e p oxy

2700C

Contextual Info: IDT7MB4040 256K x 9 CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES DESCRIPTION • High density s e p a ra te I/O , 2 m eg ab it 2 5 6 K x 9 static T h e ID T 7 M B 4 0 4 0 is a s e p a ra te I/O , 9 bit w id e 2 m eg ab it s ta tic R A M m o d u le c o n s tru c ted on a m u ltila ye r e p oxy

Contextual Info: an AM P com pany GaAs SPDT Switch DC - 4 GHz MASW4030G V 2.00 Features • Absorbtive or Reflective • Excellent Intermodulation Products • Excellent Tem perature Stability • Fast Switching Speed, 3 ns Typical • Ultra Low DC Power Consum ption • Independent Bias Control

Contextual Info: Mn AM P com pany 5-Bit GaAs Digital Attenuator DC - 2 GHz MADA2020G V 2 .0 0 Features • Attenuation ld B Steps to 31 dB • Temperature Stability ±0.1dB from -55° to +85°C Typical • Fast Switching Speed, 3 ns Typical to 90% Guaranteed Specifications

Paccom Electronics resistor

Abstract: resistor "color code" 185ra paccom capacitor, ES series polypropylene film foil axial capacitor 63Vdc
Contextual Info: Contents and Product Selection Guide Caramic Capacito«* Series MT ML Type Chip Chip D esc n p tto n General Purpose Fe a tu re Multilayer Monolithic O p e ra tin g C ap ac itan c e Te m p erture Page V o lta g e Ra n g e Tem p erature R a n g e Tolera nce R a n g e

falla

Abstract: 2LP41 2LP41SP auto clutch
Contextual Info: revision for dwg # 1PB-2LPxxx rev ch.no. - - 40 mm [1.6 in] Shown 2LP66, standard color: black n24.5 mm [1.0 in] 30 mm [1.2 in] Metal legend plates are engraved on both sides, one side in horizontal and the other side in a vertical orientation. n60 mm n24.5 mm

Contextual Info: HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline SOP-8 5 6 7 8 D D D D 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

Contextual Info: IMAGE INTENSIFIERS Image Intensifier Image intensifiers often abbreviated as I. I. were primarily developed for nighttime viewing and surveillance under moonlight or starlight. Image intensifiers are capable of detecting and amplifying low-light-level images (weak emissions or