OS 470 3N Search Results

TF1204

Abstract: MG50G2cl3 toshiba MG50G2CL3
Contextual Info: SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the optical isolator and GTR driver cirucit. Using this driver, you can design high reliability and compact system.

64x32

Abstract: SRAM 1GHz
Contextual Info: * RAM INTENSIVE SYSTEM ELEMENT RISE SBWCONDUCTOR7 ADVANCE INFORMATION SY8BP4R2 DESCRIPTION FEATURES 3ns on-board SRAM; 8,192 bits total — alpha particle immune Highest density logic via unique 6-transistor cell + greatest functionality per unit area

Contextual Info: * R A M IN T E N S IV E S Y N E R G Y SEMICONDUCTOR s y s te m e le m e n t R IS E FEATURES s y 9b p 6R4 DESCRIPTION 3ns on-board SRAM; 24K bits total — alpha particle immune Highest density logic via unique 6-transistor cell + greatest functionality per unit area

TLP 527

Abstract: TLP180 4x20 WV-120 2SA30 b9 545 02 082 00 3sx40 30X30 4X25 idtos
Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS Snap-in Terminal Type, Standard Series Standard snap-in terminal type Extended Voltage range of 6.3-500V For 500WV products, apply only FL series, high ripple use Including height 20mm products, low profile sized (Voltage range of 160-450V)

24-Pin Plastic DIP

Abstract: P4C422
Contextual Info: P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup

Contextual Info: V54ACT826 V74ACT826 8-BIT BUS INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS FEATURES •CMOS Replacement for ALS •High Speed, 6ns Typical / r •TTL Levels, I x / l OH = /48<24mA Commercial (32/24mA Military •Low Input Current, 1^iA Wax •Fully Specified: 5V ± 10% Power Supply, 50pF and 300pF

cd40168

Abstract: s443 SQUARE WAVE TO SINE WAVE schematic diagram CD4016B 4016a 4-10-0102 IC CD4016 15-V CD4016
Contextual Info: CD4016B Types CMOS Quad Bilateral Switch Term inal Assignment — — F o r T r a n s m is s io n o r M u lt ip le x in g o f A n a lo g o r D ig ita l S ig n a ls S,G ftOUT H CONTROL B CONTROL C — VSS — H ig h - V o lta g e T y p e s 2 0 -V o lt Rating

an7316

Abstract: an7317
Contextual Info: AN7316 AN7316 Dual Recording and Playback Pre-Amplifier IC for Single/Double Cassette • D e s c rip tio n The AN7316 is a monolithic integrated circuit for radio cassette recorder and built-in only fundamental function o f R ec./playback pre-am p. w ith ALC function in 2channel 16-lead DIL plastic package.

Contextual Info: L A T T IC E S E M I C O N D U C T O R 47E D Lattice •■■■■■ FEATURES ■ SBôbSq^ 0002120 1 H L A T GAL26CV12/883 High Performance E2CMOS PLD T - < / é - / 9 - 0 7 Generic Array Logic FU N C T IO N A L B L O C K DIAGRAM • HIGH PERFORMANCE E*CMOS* TECHNOLOGY

MB3789A

Abstract: MB3789APFV-E1 FPT-16P-M05 VT100 marking code fujitsu MOSFET
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27268-1E ASSP for Power Management Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789A • DESCRIPTION The MB3789A is a PWM (pulse width modulation) switching regulator controller supporting an external sync

mh7493

Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
Contextual Info: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5

CAP 100nF 50V 0603 Z5U

Abstract: MLCC CRACK 100nf electrolytic Capacitor 0201 MLCC 10nF 100nF uwa y5v chang capacitor 10uF 50v capacitor 1nf 500v 1812 x7r 100nF MLCC 1nF CAPACITOR 250v ac smd y class H63A
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITOR UWA UWA Corporate 5P Philosophies ★Product:Producing best, innovative products to our worldwide customers ★Price:Providing competitive price to our worldwide customers MANAGEMENT STRATEGY ★Placing:Distributing best products

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: cP IITSU April 1998 Revision 1.0 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized

1492/LT1493

Contextual Info: rrw m _ LT1492/LT1493 TECHNOLOGY 5MHz, 3V/|lls, Low Pow er Single Supply, D ual a n d Q u a d Precision O p Am ps F€flTUR€S D€SCRIPTIOfl • Gain-Bandwidth Product: 5MHz Typ ■ Slew Rate: 3V/fis Typ ■ Low Supply Current per Amplifier: 0.55mA Max

1k*4 SRAM

Abstract: SRAM 1GHz synergy system
Contextual Info: SYNERGY SEMICONDUCTOR F m 'n F U F N T ELEM ENT K l b b M PRELIMINARY SY15BP10R4 o vct DESCRIPTION FEATURES The SY15BP10R4 RAM-Intensive System Element is a member of Synergy's System Elements family. Fabricated in the ASSET I bipolar process, these highperformance VLSI components offer an unprecedented

TIL78

Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F eatu res • • • • • • Slew rate— 1500V/,u.s O u tput drive— 100 mA Rise and fall tim es— 2.9 ns In p u t resistance— 1011!! Pow er bandw idth— 100 M H z M IL-STD-883 devices 100% m anufactured in U.S.A.

Contextual Info: Lattice' | Semiconductor I Corporation ispLSI 8840 In-System Programmable SuperBIG High Density PLD ispEXPERT™ - LOGIC COMPILER AND COMPLETE ISP DEVICE DESIGN SYSTEMS FROM HDL SYNTHESIS THROUGH IN-SYSTEM PROGRAMMING — Superior Quality of Results — Tightly Integrated with Leading CAE Vendor Tools

TFK 808

Abstract: TFK 893 Sis 968 TFK 939 TFK 812 tfk 1007 tfk 949 rns jp3 AKD4324 AKD4522
Contextual Info: Z r- > Z 73 > ¡1P 73 H1 3V 5V GND A K D 4522 □ □ □ □ nfr ¡Sil □ S- > u 9 ^ : o At A ° Sfr SÒ- f £ o S £ s 50 ^ 9+ > r*+ V M a; A \> N> ° s v: = —i. — a w V j £ g o # v £ > ^ o > ^ w w w w w v w \, *. ! p ASAHIKASEI 4 I ^ n r a ^ r l

Contextual Info: Lattice' ispLSr and pLSr 1048C | Semiconductor I Corporation High-Density Programmable Logic Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — 8000 PLD Gates — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers

RCA527

Abstract: mthole1 SEL315 rca323 TP121 RCA628 OCX1601 FM020806A RCA426 36B-6
Contextual Info: OCX1601 Starter Kit User’s Guide Revision 1.0 February 2003 Revision History Revision 1.0, February 10th, 2003—Initial Release Copyright 2003 Fairchild Semiconductor Corporation Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are

HY5117404A

Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Contextual Info: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide

t7805ct

Abstract: T7805CT fixed voltage regulator T7805 a1024 transistor 7805 smd ua723 100n J63 TL431 SMD 595D smd diode K2 3N
Contextual Info: APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION AN96012 Philips Semiconductors TDA8766G Evaluation board documentation Application Note AN96012 APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION Author : Stéphane DESPROGES Application Laboratory - Paris