ON SEMICONDUCTOR TO MARKING CODE 720 Search Results

Contextual Info: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3798

Abstract: 2SK3798 equivalent 2SK3798 K379
Contextual Info: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K3799

Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
Contextual Info: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)

transistor K3565

Abstract: K3565 transistor k3565 K356 K3565 data 2SK3565 datasheet 2SK3565 equivalent 2SK3565 12160TC
Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3564

Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a
Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

K4113

Abstract: 2sk4113 K4113 POWER TRANSISTOR
Contextual Info: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3473

Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
Contextual Info: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: 885017 2436 MHz BAW Filter Applications WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points Applicable reject bands: 2.6 GHz WiMAX/LTE,

LTE filter band 40

Abstract: 885007 LTE band 40 LQW15AN1N0C00 LTE bandpass filter
Contextual Info: 885007 2436 MHz BAW Filter Applications WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points Applicable reject bands: 2.6 GHz WiMAX/LTE,

1N4D02

Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
Contextual Info: s TAIWAN TS317 SEMICONDUCTOR 3 -T e rm ina l A d ju sta b le P ositive V o lta g e R egulator pb RoHS COMPLIANCE TO-220 TO-263 TO-252 <D2PAK) 47 >s| m n SO T-223 (DPAK) : i 1 2 & : 12 3 Pin D e fin itio n : 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2

transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

k2845

Abstract: 2SK2845 transistor k2845
Contextual Info: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low leakage current : IDSS = 100 A (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Contextual Info: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy

C5388

Abstract: C5386 transistor C5386 transistor C5388 c5387 transistor C536 c5353 c5344 C5352 c5354
Contextual Info: Central CMZ5342B THRU CMZ5388B SURFACE MOUNT HIGH POWER SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy

Contextual Info: VUO25-16NO8 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 20 A I FSM = 380 A 3~ Rectifier Bridge Part number VUO25-16NO8 - ~ ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: IX25MB080 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number IX25MB080 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: VBO22-18NO8 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 14 A I FSM = 380 A 1~ Rectifier Bridge Part number VBO22-18NO8 - ~ ~ + Features / Advantages: Applications: Package: FO-B ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop