ON SEMICONDUCTOR MARKING CODE SOT Search Results

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

On semiconductor date Code

Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
Contextual Info: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363

MARKING 93 SOT89

Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
Contextual Info: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer

CMLDM7003E

Abstract: CMLDM7003JE CMLDM7003J
Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel

specifications of MOSFET

Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
Contextual Info: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)

marking c08

Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
Contextual Info: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode

marking code 17 surface mount diode

Abstract: MARKING KV SOT-23 CL05 marking code vc sot "Transient Voltage Suppressor" transient voltage suppressor sot23 marking code KV Transient Voltage Suppressor application notes marking d4 sot23 CSL05
Contextual Info: Central CSL05 CSL05D SURFACE MOUNT ULTRA LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSL05 Single and CSL05D (Dual) types are ultra low capacitance transient voltage suppressors packaged in the SOT-23 surface

CMLDM7002AG

Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

CMLDM7003

Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

marking code C37

Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
Contextual Info: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)

SOT23-6 MARKING 5X

Abstract: "MARKING DIAGRAM" 98AS sot23-5 e.1 marking
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A DATE 28 JAN 2011 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 L 3 L1 5X e E1 b 0.10 C M C B A S S C RECOMMENDED SOLDERING FOOTPRINT* 3.30 XXX = Specific Device Code M = Date Code

019REF

Abstract: a3he
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE E DATE 09 FEB 2010 SCALE 4:1 X Y D 6 5 4 1 2 3 A HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

Marking f1 SOT26

Abstract: c04s MARKING D3 d2 diode series d3 series DIODE marking code D3 high voltage diode high voltage diodes SOT-26 CMXD2004S
Contextual Info: Central CMXD2004S CMXD2004SR TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL, IN-SERIES HIGH VOLTAGE SWITCHING DIODES SOT-26 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004S and CMXD2004SR consists of Dual, In-Series pairs of High Voltage Silicon Switching Diodes,

CMLDM8002A

Abstract: CMLDM8002AJ marking cg8
Contextual Info: Central CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment

CMXDM7002A

Abstract: X02A 2N7002
Contextual Info: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

X02A

Abstract: CMXDM7002A 2N7002
Contextual Info: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current

Contextual Info: CMLDM7003TEG ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL SILICON MOSFET SOT-563 CASE FEATURES: • ESD protection up to 2kV • Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Central TM Semiconductor Corp.

1a8t

Abstract: CMKZ5221B CMKZ5222B CMKZ5223B CMKZ5224B CMKZ5225B CMKZ5226B CMKZ5227B CMKZ5228B CMKZ5229B
Contextual Info: Central CMKZ5221B THRU CMKZ5261B TM Semiconductor Corp. SURFACE MOUNT ULTRAminiTM TRIPLE ISOLATED SILICON ZENER DIODES 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKZ5221B Series contains three 3 isolated Silicon Zener Diodes packaged in an ULTRAminiTM SOT-363 surface mount

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B−01 ISSUE B SCALE 4:1 DATE 27 MAY 2005 D −X− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES

On semiconductor date Code sot-143

Abstract: TR13
Contextual Info: Package Details - SOT-143 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-December 2003)

BD NPN transistors

Abstract: BCX56 transistor bc icbo nA npn bc transistor icbo nA bcx56-16 MARKING BM SOT89 marking r4 diode BCX54-10 BCX54 BM marking code
Contextual Info: Central BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Peak Base Current

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

transistor 1203

Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board