CMLDM7002AG
Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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CMLDM7002AG
Abstract: CMLDM7002AJ CMLDM7002A
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS
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Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode MOSFETs, manufactured by the N-Channel DMOS Process,
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S 170 MOSFET TRANSISTOR
Contextual Info: Central CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTI DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect
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cmldm7002acmldm7002aj2n7002ot-563+1s 170 mosfet transistor
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DIODE l02
Abstract: dual mosfet "marking code 30" marking l02
Contextual Info: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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cmldm7002a2n7002ot-563500ma+6200ma400ma01-februarydiode l02dual mosfet "marking code 30marking l02
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CMLDM7002AJ
Abstract: 2N7002 CMLDM7002A marking 02J
Contextual Info: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS
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10 marking code dual transistor
Abstract: 2N7002 CMLDM7002AG semiconductor body marking
Contextual Info: CMLDM7002AG SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7002AG is a special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the
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cmldm7002ag2n7002ot-563200ma+3400ma10 marking code dual transistorsemiconductor body marking
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S 170 MOSFET TRANSISTOR
Abstract: TRANSISTOR MARKING CODE ss S 170 TRANSISTOR SPS MARKING CODE sps transistor diode marking code ej
Contextual Info: Central CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect
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cmldm7002acmldm7002aj2n7002400ma+6s 170 mosfet transistortransistor marking code sss 170 transistorsps marking codesps transistordiode marking code ej
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DIODE l02
Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
Contextual Info: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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cmldm7002acmldm7002aj2n7002200ma+6diode l02code l022n7002 pinoutmarking 02jsot transistor pinoutmarking l02
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8002A
Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
Contextual Info: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89
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L7803
Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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CMPZ4124
Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches
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4E smd diode
Abstract: Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO
Contextual Info: N ew To T he 2 □□< 4 E di ti on New additions to the 2004 SMD Databook The following pages outline the latest additions to this edition of the surface mount devices databook. Over 90 new devices manufactured by Central Semiconductor have been added, as well as the new material composition data section. To keep up to date on all the latest
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chmxd2004tocmsh1-40mot-894e smd diode+9zener diode quad surface mountsmd schottky diode a2 sod-123schottky diode sot-89smd transistor 662composition of material used in zener diodesmd transistor 662 xsmd transistor 123cmpzdc47vcmxz47vto
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SOD-923 zener
Abstract: 8002A Package Details SOT-28 NPN PNP sot-563 scr SOT-23 VF 0.1v CMXDM7002A Schottky Diode SOT-89 laptop battery pinout CMKTC825A
Contextual Info: ’ new what’s what’s new keep up to date with the latest devices from CentralTM.visit our website at: www.centralsemi.com/product/whatsnew Tiny Low VCE SAT Transistors 60V, 200mA cEt3904E (NPN) cEt3906E (PNP) features SOt-923 SOt-883L Top View • Enhanced Specification including an improved maximum VCE(SAT) of 0.1V @ 10mA
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C4751 1
Abstract: ISL9504 5d7 switching regulator 820-20 C4722 pwm INVERTER LCD CAP1210 C93-02 D8310 p66 apple
Contextual Info: 8 6 7 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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panasonic c5904
Abstract: L9741 H9730 h9745 H-9730 l9742 D790011 H9718 h9723 SLG84435
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN H ENG APPD DESCRIPTION OF CHANGE 468168 PRODUCTION RELEASED
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TRANSISTOR NPN BA RV SOT - 89
Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes
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D9778
Abstract: D9763 wze sot-23 WZE SOT23 104 mylar capacitor R2624 HP C6602 U6100 p51 apple imac MLB
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD IMAC 5,2 - REV D REV ZONE ECN D ENG APPD DESCRIPTION OF CHANGE 466215 PRODUCTION RELEASED
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R61517
Abstract: AS0B32 MXM spec pp601 40 AS0B326 126S0086 FST 172 U7200 Apple K23 MLB J9402
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 5 2 3 4 1 CK APPD SANTANA - M51 MLB REV ZONE ECN 17 ENG APPD DESCRIPTION OF CHANGE 440406 ENGINEERING RELEASED
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L7803
Abstract: RN5VD30A-F L7206 1.2 74LC125 M50 apple p66 apple HP C6602 PP12V Apple K23 MLB APPLE LCD INVERTER
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER
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C5300
Abstract: C9112 ISL9504 C4722 82d5 C4751 1 TLM8 C9750 J6602 ISL6269
Contextual Info: 8 7 6 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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