ON MARKING 3161 Search Results

TE CONNECTIVITY date code

Abstract: marking CE
Contextual Info: 107-93008 Packaging Specification 21/Feb/2013 Rev.D General Cable Assembly Label or Print Specification 1. SCOPE This specification covers the supplier’s requirements and indications for TE Connectivity Enterprise Networks , Copper cable assemblies product mark.

Contextual Info: AIW P Specifications subject to change. For latest design specifications. Mod. IV Wire-Applied Contacts and Housings 1-800-522-6752 Product Facts • Terminates 32-20 AWG discrete wire ■ Contacts have insulation support ■ Choice of three contact mating pressures

1038b

Abstract: 3161as MIL-STD-750 method 2073
Contextual Info: SENSITRON SEMICONDUCTOR DATASHEET 323, REV E.1 SS-100 SCREENING PROCEDURE DISCRETE SEMICONDUCTORS Not applicable for Axial & MELF Diodes All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure. SCREEN NUMBER

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

transistor A562

Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,

Gigabit Ethernet Controller PCIe

Abstract: 82573 PC82573V 82573 reference design PC82573L 82573e 82573 eeprom 82573L PC82573E CTRL 82573L
Contextual Info: Intel 82573 Family Gigabit Ethernet Controllers Specification Update Networking Silicon August 2009 316197-005 Revision 2.7 82573 Family Gigabit Ethernet Controller Specification Update Legal Notice Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2n7226

Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

1-86256-0

Abstract: E-7631 C3300 82007 CI 7001 e7631-5 2-87499-3 3-87483-6 1-87631-1 3-87499-7
Contextual Info: I 'S ~X " V S , I i j £ ò — ^>2 <^ Q' 3 T O i <8>"2- ~ ^ >"i à â v i p 2 Specifications subject to change. For latest design specifications. Mod. IV Wire-Applied Housings Single Row, .100 Centers Dimensioning: D im e n s io n s a re in in c h e s

smd diodes s4 1.5w

Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
Contextual Info: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )

QR204

Abstract: CECC Detail Specifications 2N2369 equivalent
Contextual Info: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )  ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )

2N2369 equivalent

Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)

CTS 750 series

Abstract: 3570 1301 051 94v0 1052 schematic amplify CV 203 TMC 3162 3570 1301 PSA 88C Delco Electronics 3570 1301 151 Delco Electronics 185
Contextual Info: R E S I S T O R P R O D U C T S The CTS Resistor Products Catalog is also on the World Wide Web at www.ctscorp.com. The Web Catalog is updated regularly to provide all customers with the latest information on new products and improvements. You can also contact us at

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2N6904

Abstract: 2N6902 MIL-STD-750 method 3161 4431 mosfet 566B
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. -The documentation and process conversion

2N7411

Abstract: SL9110 MIL-PRF19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 1998. INCH-POUND \ MIL-PRF-19500/639A 24 March1998 SUPERSEDING MIL-PRF-19500/639 09 November 1996 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

2N7440

Abstract: MIL-PRF19500 c 3421 transistor 2N7441
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND MIL-PRF-19500/659 20 August 1998

2N7439

Abstract: 2n7438 qpl-19500 MIL-PRF19500 c 3421 transistor MIL-PRF-19500 TRANSISTOR
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND MIL-PRF-19500/658 15 June 1998

2N6796

Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

pinout diagram for LGA775 processor socket core

Abstract: pinout diagram for LGA775 processor socket intel 775 motherboard diagram pinout diagram for lga775 socket am3 retention LGA 775 Socket PIN diagram socket 775 pinout bsel LGA775 socket am3 pinout VRD11
Contextual Info: Quad-Core Intel Xeon® Processor 3200 Series Datasheet —on 65 nm Process in the 775-land LGA Package supporting Intel® 64 architecture and Intel® Virtualization Technology± January 2007 Document Number: 316133-001 2 Quad-Core Intel® Xeon® Processor 3200 Series Datasheet

RTXP 18 cutout

Abstract: 1MRK 002 136 A 1MRK 000 893-A 1MRK 002 136-A ABB RTXP 18 cutout RK 926 315 SE95037 RTXh 24 SE73954 RTXP24
Contextual Info: Connection and installation components COMBIFLEX 1MRK 513 003-BEN Page 1 Issued May 2007 Revision: C Data subject to change without notice xx04000071.jpg (xx04000070.jpg) Features • Easy, flexible and rapid installation, service and expansion of both simple and complex

2N6756

Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 August 1998 INCH-POUND MIL-PRF-19500/542F 20 April 1998 SUPERSEDING MIL-S-19500/542E 17 August 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,

ST347H

Abstract: 2N4234 2N4235 2N4236 2N4335 st347
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation process conversion