ON 222 TRANSISTOR Search Results

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

10F220

Abstract: 10F222 DS30000 PIC10F220 PIC10F222 marking codes sot-23 a01
Contextual Info: PIC10F220/222 Data Sheet 6-Pin, 8-Bit Flash Microcontrollers 2005 Microchip Technology Inc. Preliminary DS41270A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

10f222

Abstract: DS30000 PIC10F220 PIC10F222 DS41266 DS41270 sot 23 5 marking CODE a04
Contextual Info: PIC10F220/222 Data Sheet 6-Pin, 8-Bit Flash Microcontrollers 2006 Microchip Technology Inc. Preliminary DS41270B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2007 Microchip Technology Inc. DS41270E Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

9316

Abstract: HI-222
Contextual Info: No. 9316 May 1993 Application Note POWER SUPPLY CONSIDERATIONS FOR THE HI-222 HIGH FREQUENCY VIDEO SWITCH Author: Juan Garcia, Product Engineer Introduction Characterization data has shown that this condition is highly dependent on the amount of elapsed time ∆t between the

HI-222

Contextual Info: TM No. 9316 May 1993 Application Note Power Supply Considerations For The HI-222 High Frequency Video Switch Author: Juan Garcia, Product Engineer Introduction Characterization data has shown that this condition is highly dependent on the amount of elapsed time ∆t between the

marking codes sot-23 a01

Abstract: ir object counter project Chs 35k pic micro 8 pin PIC10F220-I/MC PIC10F222 PIC10F222-I/OT project on circuit diagram online UPS SOT-23 Mark ANX DS30000
Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2007 Microchip Technology Inc. DS41270E Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

pic10f222

Abstract: PIC10F222-I/OT AN522 DS30000 PIC10F220 marking code 20jr marking codes sot-23 a01 DS41270E-page
Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2007 Microchip Technology Inc. DS41270E Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

HI-222

Contextual Info: Harris Semiconductor No. 9316 Harris Data Acquisition May 1993 POWER SUPPLY CONSIDERATIONS FOR THE HI-222 HIGH FREQUENCY VIDEO SWITCH Author: Juan Garcia, Product Engineer Introduction Characterization data has shown that this condition is highly dependent on the amount of elapsed time ∆t between the

Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-Bit A/D  2005-2013 Microchip Technology Inc. DS40001270F Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC18 example C18 codes ADC

Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2007 Microchip Technology Inc. Preliminary DS41270D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC10F222 micro controller

Abstract: pic10f222 DS30000 PIC10F220 example C codes pic18f for sd card 1S2006 PIC24 family
Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2006 Microchip Technology Inc. Preliminary DS41270C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

DS41266

Contextual Info: PIC10F220/222 Data Sheet High-Performance Microcontrollers with 8-bit A/D 2007 Microchip Technology Inc. Preliminary DS41270D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

488X380

Abstract: CCD222 Contact image sensor fairchild
Contextual Info: LDPAL Fairchild Imaging Sensors CCD 222 488X380-Element Area Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 185,440 sensing elements on a single chip Available horizontal resolution: 380 elements per line Available vertical resolution: 488 lines

nkt 110/12

Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
Contextual Info: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227

Contextual Info: ¡2 HARRIS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 F e a tu re s Package TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 n a n d 1 - 2 il • S in g le P ulse A v a la n c h e E n e rg y R a te d *

lg crt tv

Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Contextual Info: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.

Inverter Welder

Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM

BLY88C

Abstract: lyp 809 BLY88 SOT122A TRANSISTOR 2X5
Contextual Info: 711005b DQbBSÔT TIS « P H I N bSE D BLY88C/01 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V . The transistor is resistance stabilized and is

relay busbar

Abstract: SB-S11-P1-01-1-1A 710 opto coupler Weidmuller plc terminal phoenix 17PLUS-Q02-00 50035-G32 DC24 relay coupler with 2 n o contacts E-1048-7
Contextual Info: Solid State Remote Power Controller E-1048-7. Description The E-T-A Solid State Remote Power Controller E-1048-7. is a transistorised switching device providing both protection and signalisation. It is suitable for all applications where the capabilities

Contextual Info: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Coni igura ion

BY206

Abstract: transistor t07 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003
Contextual Info: b b s a 'm □ □ s ci 3 0 ô 070 • N AMER PHILIPS/DISCRETE L IE apx BLW32 D U.H.F. LINEAR PO W ER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation

2N2218-2N2219

Abstract: N2222 2N2221-2N2222 2N2222 2n222 2N2221 2N2222Metal ST 2n2222 2N2218-2N2219-2N2221-2N2222 2N2218
Contextual Info: 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications

100MA 45 V NPN

Abstract: fzt690b Siren DSA003713
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B TYPICAL CHARACTERISTICS 0.8 - Volts - (Volts) IC/IB=10 0.6 0.4 0.6 V V 0.01 0.1 1 10 VCE(sat) v IC VCE=2V 1.2 1.0 1K 0.8 0.6 IC/IB=100 1.2 1.0 h V 0.6 h 0.4 0.2 0.01 0.1 10 1 1.6 0.01 0.1 1 I+ - Collector Current (Amps)