OM360 Search Results

om360

Abstract: zo 107 UHF amplifier module booster-amplifiers
Contextual Info: OM360 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli­

MA-014

Abstract: N CHANNEL MOSFET 10A 1000V OM10N100NK OM360NK OM460NK
Contextual Info: OM360NK OM10N100NK OM46QNK POWER MOSFETS IN A TO-3 PACKAGE 400V Thru 1000V, N-Channel Size 6 MOSFETs, High Energy Capability FEATURES • • • • • TO-3 Package Hermetic, .060 Dia. Leads Size 6 Die, High Energy Fast Switching, Low Drive Current LowRDS on

Contextual Info: OM360NK OM10N100NK OM46QNK POWER MOSFETS IN A TO-3 PACKAGE 400V Thru 1000V, N-Channel Size 6 MOSFETs, High Energy Capability FEATURES • • • • • TO-3 Package Hermetic, .060 Dia. Leads Size 6 Die, High Energy Fast Switching, Low Drive Current Low RDS 0n

Contextual Info: OM360NK OM10N100NK OM46QNK POWER MOSFETS IN A TO-3 PACKAGE 400V T h r u 1000V. N - C h a n n e l Size 6 M O S F E T s . H ig h E n e r g y C a p a b i l i t y FEATURES • TO-3 Package Hermetic, .060 Dia. Leads • Size 6 Die, High Energy • Fast Switching, Low Drive Current

OM10N100NK

Abstract: OM360NK OM460NK
Contextual Info: OM360NK OM10N100NK OM460NK POWER MOSFETS IN A TO-3 PACKAGE 400V Thru 1000V, N-Channel Size 6 MOSFETs, High Energy Capability FEATURES • • • • • TO-3 Package Hermetic, .060 Dia. Leads Size 6 Die, High Energy Fast Switching, Low Drive Current Low RDS on

philips om360

Abstract: OM360 HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER V360
Contextual Info: • bbS3R31 0G3243Û 25b IAPX i N AMER PHILIPS/DISCRETE 0|V360 bSE J> v_ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate, ir'te r>decl fo r use in mast-head booster-amplifiers, as pream plifier in M ATV systems, and as general-purpose am pli­

OM360

Abstract: HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER UHF amplifier module boosteramplifiers booster-amplifiers
Contextual Info: OM 360 _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage w ide-band a m p lifie r in h y b rid integrated c irc u it te chnique on a th in -film substrate, intended fo r use in mast-head booster-am plifiers, as p re a m p lifie r in M A T V systems, and as general-purpose a m p li­

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

philips om360

Contextual Info: • bbSBRBl 003243A 25b M A P X i N AMER PHILIPS/DISCRETE OiV360 b^E J> _ _ y v _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a thin -film substrate, intended

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.