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    OF 395 DIODE Search Results

    OF 395 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    OF 395 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RLT395-50CMG

    Contextual Info: RLT395-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT395-50CMG is an Violet Laser Diode emitting at 395 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol


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    RLT395-50CMG RLT395-50CMG PDF

    Contextual Info: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current


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    jantx diodes

    Abstract: 4833
    Contextual Info: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type


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    MIL-S-19500/483 jantx diodes 4833 PDF

    1N3716

    Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
    Contextual Info: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom­


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    1N3712-20 1H3713-21 IN3712 1N3720 1N3713 1N3721 1N37131N3721 1N3721 3S47375 000073S 1N3716 diode germanium tu 38 f 1N3717 1N3714 1N3712 diode germanium tu 38 e 1n3719 1N3715 PDF

    kd 617

    Contextual Info: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type


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    MIL-S-19500/483 kd 617 PDF

    UNITRODE 483-3

    Abstract: JANTX 100-C unitrode 686 4 unitrode 686 4833
    Contextual Info: RECTIFIER ASSEMBLIES Three Phase Bridges, 25 Amp, Military Approved JANTX 483-1 JANTX 483-2 JANTX 483-3 D ESC R IP T IO N This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type screening tests. This series of bridges of­


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    MIL-S-19500/483 100-C UNITRODE 483-3 JANTX 100-C unitrode 686 4 unitrode 686 4833 PDF

    0240NR10D

    Abstract: 1000NR-14D 0047ZR07D 0018ZR05D 0018ZR10D 0022ZR05D 0022ZR07D 0022ZR10D 0450NR20D 0024ZR05D
    Contextual Info: Varistors are voltage-dependent, non linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed for transient suppression In electrical circuits. Transients can result from the sudden release of previously


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    10x100qus 0018ZR05D 0018ZB07D 0018ZR10D 0018ZRI4D 0022ZR05D 0022ZR07D 0800NR12D 0800NR14D 0800NR20D 0240NR10D 1000NR-14D 0047ZR07D 0022ZR10D 0450NR20D 0024ZR05D PDF

    1N3716

    Abstract: 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent
    Contextual Info: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


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    TD400 BD400 1N3712-21 1N3716 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent PDF

    1000NR-14D

    Abstract: 1000NR14D 1000NR20D 0216NR20D 0022ZR07D 0450NR12D 0068ZR100 0047ZR07D 0018ZR05D 0018ZR07D
    Contextual Info: Varistors are voltage-dependent, non-linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed ior transient suppression in electrical circuits. Transients can result from the sudden release ol previously


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    20/is 10X100Qms 0018ZR05D 0018ZR07D 0018ZR10D 0018ZR14D 0022ZR05D 0022ZR07D 1000NR14D 1000NR20D 1000NR-14D 0216NR20D 0450NR12D 0068ZR100 0047ZR07D PDF

    Contextual Info: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type


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    Dai22bl MIL-S-19500/483 PDF

    Contextual Info: ' '' i t s : ’ f 'MNR." Varistors. 1 * >" ^ ES VE. ¿Metal.OxideType * J'' X Ì . Varistors are voltage-dependent, non-linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed for transient suppression in electrical


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    E92101 E79699 PDF

    LED395-66-60-110

    Contextual Info: LED395-66-60-110 TECHNICAL DATA High Power LED Array, 60 chips, Glass Window LED395-66-60-110 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 and covered with


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    LED395-66-60-110 LED395-66-60-110 PDF

    B 57 995

    Abstract: DL306-XXXTG 347t VL308-436TG
    Contextual Info: ADVANCED INTERCONNECTIONS Closed Frame LED Sockets 5 Energy W ay, P.O. Box 1019, W est W a rw ick, Rl 02893 • Tel. 4 0 1 -8 2 3 -5 2 0 0 • FAX 4 0 1 -8 23-872 3 o c Closed Frame LED Light Emitting Diode Sockets Co) °< m D> .300 (7.62) o o o o o o ft


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    QQ-B-626 QQ-C-533 DL624-435TG DL628-435TG DL640-435TG B 57 995 DL306-XXXTG 347t VL308-436TG PDF

    1bl3

    Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high


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    MBRS130L 1bl3 PDF

    5au4 tube

    Abstract: 5au4 rs tube
    Contextual Info: 5AU4 TU MO * 01 -TWIN DIODE COATED FILAMENT 5-0 VOLTS 3.75 AMP. AC OR DC VERTICAL MOUNTING POSITION HORIZONTAL OPERATION IF P I N S 2 A N D 4 A R E PL ANE. IS P E R M I T T E D IN A V E R T I C A L BOTTOM VIEW 8 PIN OCTAL 5T GLASS BULB THE 5AU4 IS A FILAMENTARY FULL-WAVE HIGH-VACUUM RECTIFIER DESIGNED FOR


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    C2D05120A

    Contextual Info: C2D05120A VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    C2D05120A O-220-2 C2D05120 C2D05120A PDF

    ML320G2-11

    Abstract: laser diode 405nm ML3xx2 ML320G2 blue Laser-Diode ML329G2 Laser Diodes 405 nm 3.8mm
    Contextual Info: MITSUBISHI LASER DIODES ML3xx2 LD SERIES FOR INDUSTRIAL SYSTEMS ML320G2-11 / ML329G2-11 TYPE NAME Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES • High Output Power: 120mW CW ML3XX2 is a high-power, high-efficient blue-violet


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    ML320G2-11 ML329G2-11 120mW 405nm 405nm 120mW ML320G2) ML329G2) laser diode 405nm ML3xx2 ML320G2 blue Laser-Diode ML329G2 Laser Diodes 405 nm 3.8mm PDF

    SMD T26

    Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
    Contextual Info: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r


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    AX057 AX078 AX057 SMD T26 S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000 PDF

    ac alternator winding

    Abstract: diode mr850 alternator shunt regulator motorola automotive ignition controller Alternator regulator motorola automotive transistor coil ignition motorola DAC mosfet to ignition coil mosfet alternator MR850
    Contextual Info: MOTOROLA Order Number: MC33099/D Rev. 2, 06/2001 SEMICONDUCTOR TECHNICAL DATA Advance Information Alternator Voltage Regulator The MC33099 is specifically designed for regulation of an automotive system voltage using diode rectified alternator charging systems commonly


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    MC33099/D MC33099 ac alternator winding diode mr850 alternator shunt regulator motorola automotive ignition controller Alternator regulator motorola automotive transistor coil ignition motorola DAC mosfet to ignition coil mosfet alternator MR850 PDF

    Contextual Info: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


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    C4D10120A O-220-2 C4D10120A PDF

    Contextual Info: C3D10065A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 25 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    C3D10065A 650-Volt O-220-2 C3D10065A PDF

    MA4PK2003

    Abstract: 25 Ampere Silicon Power Diodes MA4PK3003 diodes with 4 ampere
    Contextual Info: A fa 3U 2000 Volt and 3000 Volt PIN Diodes K ILO V O L T PIN Diodes MA4PK2000 and MA4PK3000 Series % Features Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design Rugged, Hermetically Sealed


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    MA4PK2000 MA4PK3000 MA4PK3003 ODS-1085 MA4PK3004 ODS-1075 MA4PK2003 25 Ampere Silicon Power Diodes diodes with 4 ampere PDF

    395 transistor

    Abstract: of 395 diode bss395 transistor bss bss 395 bss 17 transistor
    Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 395 V DS = 50 V = 4 .4 A ^DS on = 0.3 CI Id • • • N channel Enhancem ent mode Package: TO -202 1> Not for new design! Type O rdering code for version in bulk Q 62702-S604 I BSS 395 M axim um Ratings Param eter


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    O-202 Q62702-S604 fl23SbOS SIK02J63 6S35L 00S440G 395 transistor of 395 diode bss395 transistor bss bss 395 bss 17 transistor PDF

    ic 4072

    Abstract: D15VD60 S15VBA MJ2400
    Contextual Info: Basic Ordering and Packing Form E xplanation o f P acking L is ts T yp e No. D 1 N ID Exam ple 1 R e verse Exam ple 2 v o lta g e X 1/10. 2SK 2663 E IA J No. E IA J C l a s s if i c a t io n . 2 S A , 2 S B , 2 S C , 2 S D : T ra n s is to r Reel width 2 S K , 2 S J : M o s fe t


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