OECONTROLLED Search Results

TC5117445CSJ

Contextual Info: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The

TC5118160CJ

Abstract: tc5118160 TC5118160c
Contextual Info: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

IS41LV16257B

Abstract: 41LV16257B PK13197T40
Contextual Info: IS41LV16257B JUNE 2007 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

TC524258

Abstract: TC524259BJ C69 WML dsf03
Contextual Info: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

Contextual Info: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.

Contextual Info: ISSI' IS 4 1 L V 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Extended Data-Out (EDO) Page Mode access cycle LVTTL compatible inputs and outputs Single +3.3V ± 10% power supply 5V I/O tolerant

Contextual Info: ISSI IS 4 1 C 1 6 1 0 0 IS 4 1 L V 1 6 1 0 0 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY AUGUST 1999 DESCRIPTION FEATURES The IS S I IS41C16100 and IS41LV16100/are 1,048,576 x 16bit high-performance CMOS Dynamic Random Access Memo­ ries. These devices offer an accelerated cycle access called

Contextual Info: IS 4 1 C 1 6 1 0 0 /S IS 4 1 L V 1 6 1 0 0 /S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE ISSI PRELIMINARY OCTOBER 1998 DESCRIPTION FEATURES The ISSI IS41C16100/S and IS41LV16100/S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access

IS41LV16105A

Contextual Info: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page

Contextual Info: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

IS41C16105

Abstract: IS41LV16105 IS41C16105-50TL N-40A
Contextual Info: IS41C16105 IS41LV16105 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE DECEMBER 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single

Am2140s

Abstract: VC1039
Contextual Info: Am2130/Am2140 1024x8 Dual-Port Static Random-Access Memories DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using one master (Am2130) and required number of slave

Contextual Info: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

MIL-STD-883 Method 1019

Contextual Info: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet i i UNITED p i g a t e c h n o lo g ie s I T l m ic r o e le c t r o n ic s c e n te r mmm FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory

Contextual Info: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which