OCT08 Search Results

P-MUSB-A511-XX

Abstract: usb VERTICAL receptacle vertical pcb mount usb MUSB-2A111-024-BP
Contextual Info: A B C E D H G F REVISIONS 24.00 .945 REV. DESCRIPTION, ECN, EAR NO. DATE APPROVED F PRODUCT DRAWING EAR 13774 OCT08/10 K.L. 2.80±0.30 .110±.012 1 1 ORDERING CODE: M U S B - A 5 1 1 - X X 18.00±0.20 .709±.008 6.00 .236 9.00 .354 14.00 .551 SERIES, RUGGED USB

VSO05561

Contextual Info: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: TSB43Ex4x www.ti.com SLLA275C – APRIL 2008 – REVISED FEBRUARY 2010 IEEE 1394a-2000 CONSUMER ELECTRONICS SOLUTION Data Sheet Extract, Rev 1.2 FEATURES 1 • • • IEEE 1394 Features – Integrated 400/200/100-Mbps 2-Port/3-Port PHY – Compliant to IEEE Std 1394-1995 and

aon6718

Abstract: AON6718L
Contextual Info: AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

AOL1718

Abstract: M2975
Contextual Info: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is

AO4406AL

Abstract: AO4406
Contextual Info: AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.

Contextual Info: SF16C01CF THRU SF16C06CF Glass Passivated Super Fast Recovery Rectifier Voltage Range 50 to 600 V Current 16.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability

SF8A01F

Contextual Info: SF8A01F THRU SF8A06F Glass Passivated Super Fast Recovery Rectifier Voltage Range 50 to 600 V Current 8.0 Ampere ITO-220AC .185 4.70 .175(4.44) MAX.412(10.5) DIA .140(3.56) .130(3.30) .140(3.56) .130(3.30) .594(15.1) .587(14.9) PIN .108(2.75) .098(2.50) 2

SCT-595

Abstract: 78-AD
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: TSB43Ex4x www.ti.com SLLA275C – APRIL 2008 – REVISED FEBRUARY 2010 IEEE 1394a-2000 CONSUMER ELECTRONICS SOLUTION Data Sheet Extract, Rev 1.2 FEATURES 1 • • • IEEE 1394 Features – Integrated 400/200/100-Mbps 2-Port/3-Port PHY – Compliant to IEEE Std 1394-1995 and

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

VSO05561

Abstract: A7s marking diode
Contextual Info: BAV 99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol

Contextual Info: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current

79a diode

Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Contextual Info: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2

Contextual Info: SF10C01CF THRU SF10C06CF Glass Passivated Super Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic ITO-220AB

hfr12a06

Contextual Info: HFR12A06 Glass Passivated Hyper Fast Recovery Rectifier Voltage Range 600 V Current 12.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 22ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45

Contextual Info: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。

复合

Abstract: ELM34605AA
Contextual Info: 复合沟道 MOSFET ELM34605AA-N •概要 ■特点 ELM34605AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 25mΩ(Vgs=10V) ·Rds(on) < 35mΩ(Vgs=-10V)

SOT JPs

Abstract: VPS05178 EHA07008
Contextual Info: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage

AOD4186

Abstract: AOD418
Contextual Info: AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for low voltage inverter applications.

1B01

Abstract: AMS 2418
Contextual Info: 5 T H IS D RAW ING IS U N P U B L IS H E D . COPYRIG HT - 4 3 2 R E LE A S E D FO R PU B LIC A TIO N BY TYCO ELECTRONICS CORPORATION. Dl ALL INTERNATIONAL RIGHTS RESERVED. DO R EVISIO N S LTR D E S C R IP T IO N REV PER ECO 2. 3. RAISED NUMBERS FOR ID EN TIFIC ATIO N O F

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

4-pin 27mhz crystal

Contextual Info: ASAHI KASEI EMD CORPORATION Low Power Multiclock Generator with VCXO AK8130D Features Description The AK8130D is a member of AKEMD’s low power multi clock generator family designed for a feature rich DTV or STB, requiring a range of system clocks with high performance. The AK8130D

Contextual Info: Complementary MOSFET ELM34605AA-N •General Description ■Features ELM34605AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V)