O2 DIODE Search Results

L-55REIR1C

Contextual Info: L-55XEIRXX 5.0mm INFRARED EMITTING DIODE ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?O2@@@@6Xg? ? ? ? W-X?hf?O2@@@@6Kh? ? ?@@@@@@@6Kg? W-X?hf? @@gW2@ h? @@@@@@@@@@@?f? ?@@@@@@@@@6Xf? 7@1?hf? W2@@@@@@@ X?f? 7@1?hf? @@@@@@@@@@@?f?

Contextual Info: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

Contextual Info: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

Contextual Info: SK 45 STA FLGM FLLMI F<LM OKLMG P QC R F VEE CYEE F WEE CZEE ;K- P ST U$> GX QT GKR EW GX QT GKR CZ CSEE CDEE GX QT GKR CD Characteristics Symbol Conditions SEMITOP 3 Six Separated Thyristors Module Values Units O2&- ;[C$> -.0J CWEU¥ KG P CEEU$ YY R O2&- ;[C$>

IR7309

Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Contextual Info: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?

Contextual Info: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage

Contextual Info: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1

PT100 REF200

Abstract: simple 5v power supply using 7805 CW 7805 PT100 RTD signal conditioning noise problem REF200 ISO213P ISO213 OPA27 PT100 RTD signal conditioning 100uH inductor
Contextual Info: ISO213 13 O2 IS Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● GAIN RANGE: 0.5 - 5000 ● ±10V INPUT SIGNAL RANGE ● INSTRUMENTATION AMPLIFIER INPUTS ● INDUSTRIAL PROCESS CONTROL: Transducer Channel Isolator for

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-O2 Features Description !SINGLE COLOR. The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. !SUITABLE FOR ALL SMT ASSEMBLY AND

Contextual Info: 1SS394 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS394 Unit in mm + 2.5 - 0.5 0.3 + 0.25 1.5 - 0 .15 , Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5mA —Q o o + i Ü - -o2 MAXIMUM RATINGS (Ta = 25°C)

LVDS to MIPI DSI

Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

dsilc6-4xx

Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

MBAV99

Abstract: MBAW56 MPN3404 MMBV3700 MBAV70 MPN3700 MBAL99 MBAS16 MBAV74 MMBD2835
Contextual Info: MOTOROLA SC iDIODES/OPTOJ Surface Mount Switching Diodes COMMON STYLE 12 & Min V @ I b r (m A) 70 100 SERIES m M 1 M H STYLE 9 -o2 3o- 3 o1 -o 1 3o- SINGLE SINGLE STYLE 18 STYLE 8 Pin vF • ' ; M - ' v' : r" / - CATHODE -W- »I 3 o— i • -«2

Contextual Info: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories

Contextual Info: AMD £ 1 LOGIC DIAGRAM continued GNDQflh^ 17422B-6 (concluded) PALLV16V8Z Family 2-123 AMD BLOCK DIAGRAM OE/lg l/Oo I/O1 I/O2 I/O3 I/O4 I/O5 1/06 I/07 17422B-1 CONNECTION DIAGRAMS (Top View) DIP/SOIC PLCC PIN DESIGNATIONS CLK GND I I/O OE Vcc 2-116 = = =

HEF4069UBP

Abstract: HEF4069UBT HEF4069 7Z84371 BAW62 HEF4069UB HEF4069UBD HEF4069UBPN
Contextual Info: HEF4069UB gates HEX INVERTER The HEF4069UB is a general purpose hex inverter. Each o f the six inverters is a single stage. Vdd I b D ii 06 I5 °5 U o4 HEF4069UB 0i I2 O2 I3 O3 Vss 7Z73695 _ Fig. 2 Pinning diagram. HEF4069UBP N : 14-lead DIL; plastic (SOT27-1)

74LS374

Abstract: SP74SC374F SP74SC374N
Contextual Info: SPI SP74SC374 PIN CONFIGURATION WITH 3-STATE OUTPUTS oE E °o E FEATURES o, E o2 E d2 IZ °3 E o3 e GND E I Tl Min DC Supply Voltage Input or Output Voltage DC Current Per Pin Any Input or Output - 0 .5 - 0 .5 DC Current Drain, V q q GND -6 5 Storage Tem perature

si6956

Contextual Info: Tem ic siiiconix_SÌ6956DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary V Ds V «•DS(on) ( Q ) I d (A ) 0.09 @ V GS = 10 V ± 2.5 0.175 @ V GS = 4.5 V ± 1.8 20 D, d2 o Q TSSOP-8 o2 ■ J5 s. S2 N-Channel M OSFET N-Channel M OSFET

HEF4069UBP

Abstract: HEF4069UBT HEF4069UBKD HEF4069UBPN MU22
Contextual Info: HEF4069UB gatsi HEX INVERTER The HEF4069UB is a general purpose hex inverter. Each o f the six inverters is a single stage. tX1 - Voo h 0 6 Is D HEF4069UB h 0S lu Ou 0 , ¡2 O2 Is O3 Vss 7273896 { > o 2 ii Fig. 2 Pinning diagram. { > o 2 s is l { > o HEF4069UBP N : 14-lead DIL; plastic

HEF4069UBP

Abstract: HEF4069UB EF4069U MSI inverter schematic diagram HEF4069UBD
Contextual Info: HEF4069UB HEX INVERTER The HEF4069UB is a general purpose hex inverter. Each o f the six inverters is a single stage. J^ L i^ U ïïlJS L JîU il Û o > D ii IB °5 °6 It Oi, 0 3 Vss HEF4069UB Oi I2 O2 I3 “lltururiArii] l^i LzJ 7 Z 7 3695 Fig. 2 Pinning diagram.

CEM9935

Contextual Info: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.

Contextual Info: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt

CERAMIC FLATPACK

Abstract: BA 4915 DIODE S4 53 ceramic DIL 14 pin transistor mj 4035 BAT22 BAT22J BAT24H BAT26 BAT28H
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Pin Configuration n-p-n C p-n-p B C IU J ’m□ ‘Ù C E m u u E u B u: C CL □ B O T ba 1U E □ _□ _ □ O U E B B Û T m□ □ LJ D 14 Lead DIL 4915 N-channel o2 s2 f i f i

F4069UB

Abstract: HEF4069UBP 4069U 4069UB HEF4069 HEF4069UBT 4069ubp
Contextual Info: HEF4069UB gates HEX INVERTER The H E F 4069U B is a general purpose hex inverter. Each o f the six inverters is a single stage. J^U^U^TJïïUiôLJïLm V dd ^ D li 06 Is 05 0^ H E F 4069U B 0, l 2 O2 I3 03 Fig. 2 Pinning diagram. H E F 4069U B P : 14-lead D IL ; plastic SOT-27 .