CEM9935 Search Results
CEM9935 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEM9935 | Chino-Excel Technology | Dual N-Channel Enhancement Mode Field Effect Transistor | Scan | 512.57KB | 5 | ||
| CEM9935A | Chino-Excel Technology | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 102.13KB | 4 |
CEM9935 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEM9935Contextual Info: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. |
OCR Scan |
cem993580itiyf-90 | |
CEM9935AContextual Info: CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6.0A, RDS ON = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
cem9935a | |
CEM9935AContextual Info: CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6.0A, RDS ON = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
cem9935a | |
CEM9935A
Abstract: 5143 so8
|
Original |
cem9935a5143 so8 | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
|
Original |
o-251/to-252o-220/to-263ot-23ot-223+13 |