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    cep4060al

    Contextual Info: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		85itiqo-220o-263to-263+3to-220cep4060alr/ceb4060alrcep4060al PDF

    CEM9935

    Contextual Info: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.


    OCR Scan     		cem993580itiyf-90 PDF

    MECP01

    Contextual Info: N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds on =80iti Q RDS(ON)=85mß @ V gs =1 0V. D @ V gs =5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-252 package.


    OCR Scan     		mecp01o-252to-252aa PDF