NTE52 Search Results

10W ZENER DIODES

Abstract: 10W zener diode zener diode 30c 10 watt zener diode NTE5182A Zener Diode NTE5198A 12 volt zener diode 10 watts 3.9V ZENER DIODE zener 10w NTE5178A
Contextual Info: NTE5174A thru NTE5232A Zener Diode, 10 Watt ±5% Tolerance Features: D Zener Voltage 3.9V to 200V D DO4 Stud Mount Package Absolute Maximum Ratings: Forward Voltage IF = 2A , VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V

NTE53

Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Contextual Info: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

Contextual Info: NTE524V48 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage750 V(RMS) Max. Applied Voltage480 V(DC) Max. Applied Voltage640 I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage1240 @I(PP) (A) (Test Condition)1.0m W(TM) Max.(J) Transient Energy180

Contextual Info: NTE524V42 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage680 V(RMS) Max. Applied Voltage420 V(DC) Max. Applied Voltage560 I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage1110 @I(PP) (A) (Test Condition)1.0m W(TM) Max.(J) Transient Energy160

1V130

Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: NTE5246AK Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.2 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-5

Contextual Info: NTE5286AK Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage105 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-5

Contextual Info: NTE5289AK Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage130 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-5

524V13

Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

NTE525

Contextual Info: NTE525 Silicon Diode High Voltage Fast Recovery Switch Features: D Fast Switching D Low Leakage D High Current Capability D High Surge Capability D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified, Note 1 Maximum Recurrent Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

1V130

Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

NTE5245A

Abstract: NTE5247A zener diode 50w NTE5240A NTE5240AK NTE5241A NTE5242A NTE5243A NTE5244A NTE5246A
Contextual Info: NTE5240A thru NTE5296A 50 Watt Zener Diodes ±5% Tolerance Features: D Zener Voltage 3.9 to 200V D Low Zener Impedance D Highly Reliable and Rugged D Also Available in Reverse Polarity NTE5240AK thru NTE5296AK Maximum Ratings: Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +175°C

Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: NTE5246A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage6.2 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-5

NTE52

Contextual Info: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for

NTE5245A

Abstract: nte5259a 245 zener NTE5248A NTE5267A nte5241 NTE5256 NTE5240A NTE5241A NTE5242A
Contextual Info: NTE5240A thru NTE5296A 50 Watt Zener Diodes ±5% Tolerance Features: D Zener Voltage 3.9 to 200V D Low Zener Impedance D Highly Reliable and Rugged D Also Available in Reverse Polarity NTE5240AK thru NTE5296AK Maximum Ratings: Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Contextual Info: NTE525 Silicon Diode High Voltage Fast Recovery Switch Electrical Characteristics: Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Maximum Average Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

524V13

Abstract: 524V25 2V035
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

NTE525

Contextual Info: NTE525 Silicon Diode High Voltage Fast Recovery Switch Features: D Fast Switching D Low Leakage D High Current Capability D High Surge Capability D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified, Note 1 Maximum Recurrent Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

Contextual Info: NTE5286A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage105 @I(Z) (A) (Test Condition) Tolerance (%)5.0 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-5

HIGH VOLTAGE DIODE for microwave ovens

Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
Contextual Info: 1994-2012.qxp:QuarkCatalogTempNew 9/11/12 8:55 AM Page 1994 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Comparators, Amplifiers, Diodes, Transient Voltage Suppressors TVS and IGBTs Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components