NTE238 Search Results

NPN Transistor 1500V

Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Contextual Info: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V

NTE2382

Abstract: NTE2383
Contextual Info: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay

NTE2385

Contextual Info: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A

NTE2383

Abstract: NTE2382
Contextual Info: NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch Compl to NTE2382 Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay

NTE2388

Contextual Info: NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching

NTE2381

Contextual Info: NTE2380 N–Ch & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Contextual Info: NTE2387 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

mosfet NTE2384

Abstract: NTE2384 mosfet for 900V, 6A
Contextual Info: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

NTE2389

Contextual Info: NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Contextual Info: NTE2381 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

NTE2387

Contextual Info: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

N-Channel Enhancemen-Mode MOSFET

Abstract: NTE2386
Contextual Info: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power

Contextual Info: NTE2386 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

Contextual Info: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

MA03-2

Abstract: MA032 ipos 150 MD012A MD090 MA020 MA04-1 MA033 NTE261 MD001A
Contextual Info: MCP18480 -48V 热插拔控制器 特征 说明 • 允许在带电背板上安全拔插插板 • 可提供故障检测和精确定时所需的准确 （<1.5%） 内部参考电压 • 可设定的返送电流限定值 • 可设定的电路断路器电流限定值

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

NTE2382

Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

dual TMB 1800

Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
Contextual Info: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

SSH6N80

Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
Contextual Info: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0

mos fet k 2717

Abstract: transorb 200v 2N5400 MCP18480 MPSA43 NTE2388 NTE261 12v regulated power supply using centre tap
Contextual Info: M MCP18480 Evaluation Board User’s Guide  2002 Microchip Technology Inc. Advance Information DS51302A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.