NTE2381 Search Results

NTE2381

Contextual Info: NTE2380 N–Ch & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Contextual Info: NTE2381 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

NTE2382

Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL

dual TMB 1800

Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
Contextual Info: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number

low voltage mosfet switch 3 amp

Abstract: mosfet 55 nf 06 200 Amp mosfet NTE2383 NTE465 NTE2381 NTE2382 jfet pch 300 Amp mosfet dual P-Channel JFET
Contextual Info: N T E ELECTRONICS 1? E INC DfHHfEP • ^431251 0001112 4 ClCMfl mjgJMMiB ■ ■WiMlfcJJlMBi HTE TYPE NO. DESCRIPTION AND APHJCAIWN CASE STYLE DUU HO. DRAW TO SOURCE BREAKDOWN . VOUAGE fill T-39-OJ votnæ MAX CONTINUOUS DRAIN CURRENT STATIC DRAIN TO ON SOURCE