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    NTE2386 Datasheets (1)

    NTE Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTE2386
    		NTE Electronics MOSFET N-Channel Enhancemen Mode, High Speed Switch Original PDF 27.72KB 3
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    NTE2386 Price and Stock

    NTE Electronics Inc

    NTE Electronics Inc NTE2386

    POWER FIELD-EFFECT TRANSISTOR, 6.2A I(D), 600V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE2386 1
    • 1 $54.82
    • 10 $54.82
    • 100 $54.82
    • 1000 $54.82
    • 10000 $54.82
    		Buy Now

    NTE2386 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Contextual Info: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


    Original     		nte2386n-channel enhancemen-mode mosfet PDF

    Contextual Info: NTE2386 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


    Original     		nte2386 PDF