NSID TECHNOLOGY PROCESS Search Results

PC MOTHERBOARD CIRCUIT diagram

Abstract: MOTHERBOARD CIRCUIT diagram for playstation 2 playstation 3 MOTHERBOARD CIRCUIT diagram SONY PLAYSTATION 3 playstation 2 motherboard playstation 2 playstation 3 SONY LAPTOP DIAGRAM playstation motherboard circuit diagram 0.18-um CMOS technology
Contextual Info: National News May 2002 DP83847 www.national.com/pf/DP/DP83847.html DsPHYTER II - Single 10/100 Ethernet Transceiver Ethernet Mac DP83847 MII 10/100 Mbps DsPHYTERII 25 MHz Clock Magnetics System Diagram Features and Benefits The DP83847 is a full feature single Physical Layer

NSID technology Process

Abstract: crosspoint switch 4x4 CLC018 DS90CP04 lvds pin-out simple switch block diagram
Contextual Info: National News July 2002 DS90CP04 www.national.com/DS/DS90CP04.html 4x4 Low Power 2.5 Gbps LVDS Digital Crosspoint Switch Functional Block Diagram IN1+ IN1IN2+ IN2IN3+ IN3IN4+ IN4- Product Description DS90CP04 is a 4x4 digital crosspoint switch with broadside input and output pins for efficient board

video pattern generator

Abstract: serial video generator CLC030 test pattern generator HDTV video "line driver" NSID technology Process
Contextual Info: National News CLC030 March 2002 www.national.com/pf/CL/CLC030.html SMPTE 292/259 Digital Video Serializer with Ancillary Data Insertion and Integrated Cable Driver Block Diagram EDH/CRC Generator HD Data HD/SD Data ANC/CTRL I/O Buffer Formatter EDH/CRC Line Number

LMX5251

Abstract: LQFP-100 footprint CVSD fpga bluetooth receiver IC3000 CP3BT10 CP3BT10G38 CP3BT10K38 CR16B CR16C
Contextual Info: CP3BT10 Connectivity Processor with BluetoothTM Technology The CP3BT10 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip SRAM and Flash memory provides high computing bandwidth,

SCX6B86

Abstract: NSID technology Process ebfx scx6b
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 08/16/95 Last Update Date: 01/28/98 Last Major Revision Date: 08/16/95 MNXDD8/EBF-X REV 0B1 CUSTOMER ASIC CMOS 1.5u General Description SCX6B86 CMOS 1.5u gate array technology of using 8586 gates equivalent.

DS90UH925Q

Abstract: ds90uh926 DS90UH926Q SQA48A LVDS to rgb888 30136 AEC-Q100 RGB888 DS90UH925
Contextual Info: October 7, 2010 5 - 85 MHz 24-bit Color FPD-Link III Serializer with HDCP General Description Features The DS90UH925Q serializer, in conjunction with the DS90UH926Q deserializer, provides a solution for secure distribution of content-protected digital video within automotive entertainment systems. This chipset translates a parallel

8102306CA

Abstract: LF148 LF147J-SMD 10E12 LF147 LM124 LM148
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 02/08/95 Last Update Date: 08/24/98 Last Major Revision Date: 02/08/95 MDLF147-X REV 0A1 WIDE BANDWIDTH QUAD JFET INPUT OPERATIONAL AMPLIFIER General Description The LF147 is a low cost, high speed quad JFET input operational amplifier with an

SH7263

Abstract: SH7203 R5S72630 BCR01 RCAN-TL1 72 M3A-HS30
Contextual Info: APPLICATION NOTE SH7263/SH7203 Group Sample Application for the CAN Module Remote Frame Reception Introduction This application note describes the controller area network module (RCAN-TL1) and provides an example of its application to remote frame reception.

RCAN-TL1 72

Abstract: R5S72630 SH7263 SH7203
Contextual Info: APPLICATION NOTE SH7263/SH7203 Group Sample Application for the CAN Module Data Frame Reception Introduction This application note describes the controller area network module (RCAN-TL1) and provides an example of its application to data frame reception.

D2Pak Package dimensions

Abstract: transistor equivalent table fdb6021p CBVK741B019 FDB6021P FDP6021P FDP7060
Contextual Info: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V

LF148

Abstract: lf147 8102306CA 0A1 tube
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 02/08/95 Last Update Date: 08/24/98 Last Major Revision Date: 02/08/95 MDLF147-X REV 0A1 WIDE BANDWIDTH QUAD JFET INPUT OPERATIONAL AMPLIFIER General Description The LF147 is a low cost, high speed quad JFET input operational amplifier with an

zener diode 3.0 b2

Abstract: zener diodes color coded BE 64A m 9835 FDP7060 L86Z NDB7061 NDP4060L NDP7061 CBVK741B019
Contextual Info: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L NDP7061
Contextual Info: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: CM O S STATIC RAM 256K 6 4 K x 4-BIT Integrated D evice "technology. Inc IDT61298S IDT61298L I FEATURES: DESCRIPTION: • Fast O u tp u t E nable (OE) p in a vaila ble fo r a d d e d system fle x ib ility • H igh sp ee d (equal a ccess and c y c le tim es)

B667

Abstract: CBVK741B019 FDB6676S FDP6676 FDP6676S FDP7060 Schottky diode TO220
Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

B667

Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

MB571

Abstract: 41LG
Contextual Info: DS90C031 LVDS Quad CMOS Differential Line Driver General Description Features The DS90C031 is a quad CMOS differential line driver designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data rates in excess of 155.5 Mbps 77.7 MHz utilizing Low Voltage Differential Signaling (LVDS) technology.

mb570

Contextual Info: DS90C032 LVDS Quad CMOS Differential Line Receiver General Description Features The DS90C032 is a quad CMOS differential line receiver designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

mb570

Abstract: 90C032 6AN1 90C032T
Contextual Info: DS90C032 LVDS Quad CMOS Differential Line Receiver General Description Features The DS90C032 is a quad CMOS differential line receiver designed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data

zener diode 3.0 b2

Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L NDP5060
Contextual Info: October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L NDP5060L
Contextual Info: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This