NS-2B VISHAY Search Results

fe2c

Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

DO-204AP

Abstract: fe2c
Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

fe2c

Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: designfeature SANJAY HAVANUR, Senior Manager, System Applications Vishay Siliconix, Santa Clara, CA Optimum Dead Time Selection in ZVS Topologies Insufficient dead time during turn off can result in the loss of ZVS, poor efficiency, and in the worst case, failure of the

Si4621DY-T1-E3

Abstract: si4621 S6078 Schottky Diode 20V 5A
Contextual Info: Si4621DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges

SUD08P06-155L

Abstract: SUD08P06-155L-E3
Contextual Info: New Product SUD08P06-155L Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.155 at VGS = - 10 V - 8.4 0.280 at VGS = - 4.5 V - 7.4 • TrenchFET Power MOSFETS • 175 °C Rated Maximum Junction Temperature

si4829

Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21

73855

Abstract: Si4621DY-T1-E3
Contextual Info: New Product Si4621DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Contextual Info: Si4621DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Si4621DY-T1-E3

Abstract: si4621dy
Contextual Info: Si4621DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ.) 4.5 nC • Halogen-free According to IEC 61249-2-21 Definition

Si4621DY-T1-E3

Abstract: Schottky Diode 20V 5A
Contextual Info: New Product Si4621DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Contextual Info: New Product Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested

SI4565ADY

Abstract: list of P channel power mosfet Si4565ADY-T1-E3
Contextual Info: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

SI4565ADY

Abstract: SI4565ADY-T1-E3
Contextual Info: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

74452

Abstract: 70941
Contextual Info: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

74452

Abstract: Si4566DY Si4566 list of P channel power mosfet
Contextual Info: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

3045n

Abstract: Si4559ADY
Contextual Info: Si4559ADY New Product Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = –10 V –3.9 0.150 at VGS = –4.5 V

Si4569DY

Contextual Info: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V

Si4830CDY

Contextual Info: Si4830CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Si4834CDY-T1-E3

Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Si4830CDY

Contextual Info: New Product Si4830CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a, e Qg (Typ.) RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V

Si4650DY-T1-E3

Contextual Info: New Product Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 30 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

Si4569DY-T1-E3

Abstract: si4569 SI4569DY
Contextual Info: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V