AN609
Abstract: Si4566DY 30272
Contextual Info: Si4566DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Abstract: 70941
Contextual Info: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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Si4566DY
Contextual Info: SPICE Device Model Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Abstract: Si4566DY Si4566 list of P channel power mosfet
Contextual Info: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V
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