SI4834CDY Search Results
SI4834CDY Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4834CDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SOIC | Original | 15 | |||
| SI4834CDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SOIC | Original | 15 |
SI4834CDY Price and Stock
Vishay Intertechnologies SI4834CDY-T1-E3Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4834CDY-T1-E3 | 4,937 | 1 |
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Buy Now | ||||||
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SI4834CDY-T1-E3 | 3,949 |
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Buy Now | |||||||
| SI4834CDY-T1-E3 | 2,000 |
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SI4834CDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 |
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si4834cdy2002/95/ecsi4834cdy-t1-e3si4834cdy-t1-ge3+1 | |
Si4834CDY-T1-E3Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 |
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si4834cdy2002/95/ec18-jul-08si4834cdy-t1-e3 | |
SUP60N06-18 SPICE Device ModelContextual Info: SPICE Device Model Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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si4834cdy18-jul-08sup60n06-18 spice device model | |
Si4834CDY-T1-E3Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 |
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si4834cdy2002/95/ec11-mar-11si4834cdy-t1-e3 | |
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Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 |
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si4834cdy2002/95/ecsi4834cdy-t1-e3si4834cdy-t1-ge3+2 | |
7919
Abstract: 7533 datasheet 7919 datasheet 1564 8326 AN609 95142 35325
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si4834cdyan60910-jul-087919+6 | |
68904
Abstract: "Package SO-8" MOSFET IGSS 100A Si4834BDY Si4834BDY-T1-E3 Si4834CDY-T1-E3
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si4834cdysi4834bdysi4834cdy-t1-e3si4834bdy-t1-e3+4 | |
spice
Abstract: 64380
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si4834cdys-82196-rev22-sep-08spice+1 | |
Si4834CDY-T1-E3Contextual Info: New Product Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a, e Qg (Typ.) RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V |
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si4834cdy18-jul-08si4834cdy-t1-e3 | |
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Contextual Info: Si4834CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 |
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si4834cdy2002/95/ecsi4834cdy-t1-e3si4834cdy-t1-ge3+3 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 |