NS 250N Search Results

Contextual Info: M O S E L V ÏÏT E U C V53C664A 6 4 K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM 60/60L 70/70L 80/S0L Max. RAS Access Time, tR A r 60 ns 70 ns 80 ns Max. Column Address Access Time, (tr 4 i ) 35 ns 40 ns 45 ns Min. Fasi Page Mode Cycle Time, (tp r )

ly2117

Abstract: LY 2117 20/LY 2117 intel 2117 S1123 40ns-e S6054 s6055
Contextual Info: inteT 2117 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modify-Write Cycle (ns) 330 375 475 Non-Latched Output is Three-State, TTL Compatible RAS Only Refresh 128 Refresh Cycles

intel 2732

Abstract: eprom 2732A 2732A INTEL IC 2732 intel 2732 eprom 2732A-2 ic 2764 rom 2732 eprom pin diagram of ic 2732 2732A
Contextual Info: intei 2732 32K 4K x 8 UV ERASABLE PROM Output Enable for MCS-85 and MCS86™ Compatibility Fast Access Time: — 390 ns Max. 2732-4 — 450 ns Max. 2732 — 550 ns Max. 2732-6 Industry Standard Pinout — JEDEC Approved Low Power Dissipation: — 150mA Max. Active Current

ic ac 1501-12

Abstract: V53C664K10
Contextual Info: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )

ic ac 1501-12

Abstract: V53C664K10 DN-19 MCSI
Contextual Info: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )

intel 2117

Abstract: S6054 2117S
Contextual Info: in t e i 2117 FAMILY 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modlfy-Wrlte Cycle (ns) 330 375 475 N on-Latched Output is Three-State, T T L Com patible RAS Only Refresh 128 Refresh Cycles Required Every 2ms

architecture of 80486 microprocessor

Abstract: intel 80486 pin diagram R2000 mips motorola 88000 MIPS R2000 80960CA 80960KB R2000 R3000 intel Q67
Contextual Info: CY7C270 CYPRESS SEMICONDUCTOR Features • • 0.8-micron CMOS for optimum speed/power • High speed for commercial and military — 25-ns single access time — 1 1 -ns Reprogrammable 16K x 16 Processor-Intelligent PROM burst access time • 16-bit-wide words

Contextual Info: 1N5619 600 V rectifier 1.5 A forward current 250 ns recovery time 10.00 Diodes High-S. Page 1 of 1 Enter Your Part # Home Part Number: 1N5619 Online Store 1N5619 Diodes 600 V rectifier 1.5 A forward current 250 ns recovery Transistors time Integrated Circuits

T 2109

Abstract: S6064 intel 2117 2109 S6002 S6000 S6001 S6003 S6067
Contextual Info: in te i 2109 FA M ILY 8,192 x 1 BIT D Y N A M IC RAM 2109-3 S6000.S6001 2109-4 S6002.S6003 200 250 R ead, W rite C ycle ns 375 410 R e a d -M o d ify -W rite C ycle (ns) 375 475 M axim um Access T im e (ns) 8K R AM , Industry Std. 16-Pin Package ±10% T o lerance on All Pow er Supplies:

Contextual Info: ADV MICRO MEMORY IME D I 055?52ñ □□E?t,fc>Q Am27045 ? Advanced Micro Devices 16,384-Bit 2048 x 8 High-Performance CM OS REGISTERED PROM DISTINCTIVE CHARACTERISTICS • High-speed (20 ns) setup time (10 ns) clock-to-output/Low-Power (90 mA) CMOS EPROM TEchnology

Contextual Info: SCS-THOMSON *JM > DSll g|g@ilUl inMID @ ST10R165 16-BIT ROMLESS MICROCONTROLLER DATASHEET • High performance 16-bit CPU with 4-stage pipeline ■ 100 ns instruction cycle tim e at 20-MHz CPU clock ■ 500 ns multiplication ( 1 6 x 1 6 bits , 1 |as division

HI3-539-5

Abstract: HI1-539-5 HI1-0516-5 IH5216 IH6208 IH9108 THOMSON 58E THOMSON DISTRIBUTOR 58e d IH5108 IH5116
Contextual Info: _ THQ ns°N/ D I S T R I B UTOR 5flE D • ^02^73 0005^73 Tib ■ TCSK — Analog Multiplexers General Purpose Mux Family Continued Special Features Analog Voltage Range ^S upply = (±15V) 'DS(ON) ( f i Max) 'D(OFF) (nA Max) *ON (ns Max) ‘ OFF

Contextual Info: 126 MHz Filter for GSM Applications Part Number 854067 Vertical: 1 dB/Div Vertical: 100 nsec/Div M in im u m T y p ic a l M a x im u m MHz NS 126 NS dB - 16.5 18.5 U n it Param eter Center Frequency Insertion Loss Lower 2 dB Point M Hz - 125.52 125.7 Upper 2 dB Point

d9314

Abstract: x1 x2 eprom d1 d2 d3 d4 d5 d6 TM320C TMS320LC15 LC1S TEXAS INSTRUMENTS 32 PIN PLCC 16 bit multiplier Dp 104 P15 Package TMS320C15
Contextual Info: TMS320C15, TMS320E15, TMS320LC15, TMS320P15 DIGITAL SIGNAL PROCESSORS JANUARY 1987 — R E V IS E D JULY 1991 K ey F eatu res: T M 3 2 0 C 1 5 /E 1 5 /L C 1 5 /P 1 5 +5 V or +3.3 V • Instruction Cycle Timing: — 160-ns TMS320C15-25/E15-25 — 200-ns (TMS320C15/E15/P15)

Contextual Info: S C S -T H O M S O N L ig ffM iD g g S T 1 0 R 1 6 5 16-BIT ROMLESS MICROCONTROLLER DATASHEET • High performance 16-bit CPU with 4-stage pipeline ■ 100 ns instruction cycle time at 20-MHz CPU clock ■ 500 ns multiplication 1 6 x 1 6 bits , 1 us division

W4-052

Abstract: TIL43 st10 Bootstrap ST10 ST10R165 t18SR t56cc
Contextual Info: 7 7 “T C S G S -T H O M S O N 0 * [ia iL i ^ G M [](g § ST10R 165 16-BIT ROMLESS M ICRO CONTROLLER DATASHEET • High performance 16-bit CPU with 4-stage pipeline ■ 100 ns instruction cycle time at 20-MHz CPU clock ■ 500 ns multiplication ( 1 6 x 1 6 bits , 1 (xs division

Contextual Info: WE128K32-XXX WHITE /M ICROELECTRONICS □ 128Kx32 EEPROM MODULE, SMD NUMBER 5962-94585 pending FEATURES • A ccess T im e s of 1 50nS, 2 0 0 nS , 2 5 0 nS and 300nS ■ Lo w P o w e r C M O S ■ Packaging: ■ A u to m a tic Page W r it e O p e ra tio n

Ti3C

Abstract: ST10 ST10R165 st10 Bootstrap 0R165 3AT30UT
Contextual Info: 3 T SGS-THOMSON kT C IM g [M S i(!M (M O (g § S T10R 165 16-BIT ROM LESS M ICRO CO NTROLLER DATASHEET • High perform ance 16-bit CPU w ith 4-stage pipeline ■ 100 ns instruction cycle tim e at 20-M H z CPU clock ■ 500 ns m ultiplication ( 1 6 x 16 bits , 1 ¡as division

MF81M1-GBDATXX

Abstract: MF810M-G7DATXX F8513 MF81M1GBDATXX MF31M0-M6D
Contextual Info: • P C CARDS JEIDA 68P IN TYPE Flash memory cards Memory capacity Data bit Access tim e (MB) (bit) (ns) WP 0.25 8/16 200 0.5 8/16 1 8/16 Type Ns>, AM Q 200 o 200 2 8/16 8/16 200 8/16 200 10 8/16 200 16 8/16 20 8/16 o n 200 B Gard thickness Options 200 200

Contextual Info: A Subsidiary of SILICON TRANSISTOR CORP. Wideband, Fast-settling Operational Amplifier Features □ Fast Settling Time 250ns to 0.01 %, ±10V step □ High Slew Rate 325V/ns □ 450MHz Gain-Bandwidth Product Description Featuring a full differential input, 450MHz gainbandwidth product, and a

Contextual Info: A Subsidiary of SILICON TRANSISTOR CORP. Wideband, Fast-settling Operational Amplifier Features □ Fast Settling Time 250ns to 0.01 %, ±10V step □ High Slew Rate 325V/ns □ 450MHz Gain-Bandwidth Product Description Featuring a full differential input, 450MHz gainbandwidth product, and a

Contextual Info: PRELIM INARY CYPRESS - = SEMICONDUCTOR Features • 0.8-m icron C M O S fo r optim um speed/ power • H igh speed — 20 ns m ax set-up — 12 ns clock to o u tp u t • 16-bit-wide w ords • R egistered o u tp u ts • T hree p ro g ram m ab le in p u t ch ip se­

7 segment HS 1106 BS

Abstract: SERVICE MANUAL tv TCL t71c ST10 ST10F167 cm 20 mdl 12h st10 Bootstrap
Contextual Info: iM g[MSi iroa [¡ao(g§ SGS-THOMSON S T 1 0 F 1 6 7 16-BIT MCU WITH 128K BYTE FLASH M EM O RY PR ELIM IN A R Y D A TA SH EET • High P erform ance 16-bit CPU w ith 4-S tage Pipeline ■ 100 ns Instruction C ycle T im e at 20M H z CPU C lock ■ 500 ns M ultiplication ( 1 6 x 16 bit , 1 jxs Division

Contextual Info: bSE ]> m o s e l -vi tel ic MOSEL- VITELIC • bBSBBTl DGQnñS V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y T E W R ITE C M O S D Y N A M IC R A M V53C664 P R E L IM IN A R Y 80/80L 10/10L Max. RAS Access Time, tRAn 80 ns 100 ns Max. Column Address Access Time, (tr s 4)