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    S1123 Search Results

    S1123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMCS1123B2AQDVGR
    		Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    PMCS1123C5QDVGR
    		Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123B1AQDVGR
    		Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123B3AQDVGR
    		Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123B5AQDVGR
    		Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
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    DECA F24S1-1233RDS002

    Switch: vandal resistant; Pos: 2; SPDT; 2A/250VAC; 1A/30VDC; IP67
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME F24S1-1233RDS002 66 1
    • 1 $12.80
    • 10 $11.40
    • 100 $9.42
    • 1000 $9.42
    • 10000 $9.42
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    Ingun Prufmittelbau GmbH GKS-112 302 080 A 1507

    Test probe: ICT/FCT; 8A; Ø: 0.8mm; GKS-112; CuBe; 1.5N; push-in; 20mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GKS-112 302 080 A 1507 1
    • 1 $5.03
    • 10 $4.71
    • 100 $4.71
    • 1000 $4.71
    • 10000 $4.71
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    Ingun Prufmittelbau GmbH GKS-112 302 100 A 0802

    Test probe: ICT/FCT; 5A; Ø: 1mm; GKS-112; CuBe; 0.8N; push-in; 20mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GKS-112 302 100 A 0802 1
    • 1 $5.03
    • 10 $4.71
    • 100 $4.71
    • 1000 $4.71
    • 10000 $4.71
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    Ingun Prufmittelbau GmbH GKS-112 302 100 A 1502 M

    Test probe: screw-in; 8A; Ø: 1mm; GKS-112; CuBe; 1.5N; screw-in; 20mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GKS-112 302 100 A 1502 M 1
    • 1 $6.64
    • 10 $6.23
    • 100 $6.23
    • 1000 $6.23
    • 10000 $6.23
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    Ingun Prufmittelbau GmbH GKS-112 302 150 A 5008

    Test probe: ICT/FCT; 8A; Ø: 1.5mm; GKS-112; CuBe; 5N; push-in; 20mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GKS-112 302 150 A 5008 1
    • 1 $5.03
    • 10 $4.71
    • 100 $4.71
    • 1000 $4.71
    • 10000 $4.71
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    S1123 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    si1922

    Abstract: SI1922EDH
    Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		si1922edh2002/95/ecot-363sc-70+4si1922edh-t1-ge32011/65/eu12-mar-12si1922 PDF

    Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si3453dv11-mar-11 PDF

    sir882a

    Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sir882adp11-mar-11sir882a PDF

    Contextual Info: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package


    Original     		sum09n20-2702002/95/eco-263sum09n20-270-e3+325trademarks2011/65/eu12-mar-12 PDF

    Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		sihf22n60e2002/95/eco-22011-mar-11 PDF

    Contextual Info: SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 75 RDS(on) () at VGS = 10 V 0.0048 ID (A) • TrenchFET Power MOSFET 120


    Original     		sqm120n08-05aec-q101o-2632002/95/ec+2sqm120n08-05-ge311-mar-11 PDF

    Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		siz730dt2002/95/ecsiz730dt-t1-ge32011/65/eu+112-mar-12 PDF

    234B

    Contextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V


    Original     		siz790dt2002/95/ec2011/65/eu12-mar-12+1234b PDF

    Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)


    Original     		siz900dt2002/95/ecsiz900dt-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a


    Original     		siz904dt2002/95/ecsiz904dt-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		sq2308besaec-q101o-236ot-23+22002/95/ecsq2308bes-t1-ge3 PDF

    Contextual Info: SUM23N15-73 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.073 at VGS = 10 V 23 0.077 at VGS = 6 V 22.5 • • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature Low Thermal Resistance Package


    Original     		sum23n15-732002/95/eco-263sum23n15-73-e3+32011/65/eujs709a02-oct-12 PDF

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		s1-118s1-110s1-103s1-100+12s1-122s1-127ttl11ttl13ttl15ttl16diode s1 77s124diode s1diode s1 74socket s1s1-128 PDF

    Contextual Info: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		siz710dt2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)


    Original     		siz700dt2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		siz730dt2002/95/ec2011/65/eu12-mar-12 PDF

    Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions


    Original     		sihf12n60e2002/95/eco-22011-mar-11 PDF

    0220S

    Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		sq2308beso-236ot-23aec-q101+42002/95/ecsq2308bes-t1-ge311-mar-110220s PDF

    SI1902CDL

    Abstract: marking code pe "Switching diode" 6pin
    Contextual Info: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si1902cdl2002/95/ecot-363sc-70+4si1902cdl-t1-ge311-mar-11marking code peswitching diode" 6pin PDF

    Contextual Info: SQJ884EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		sqj884epaec-q1012002/95/ecsqj884ep-t1-ge3+111-mar-11 PDF

    Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.28 Qg max. (nC)


    Original     		sihb15n60e2002/95/eco-26311-mar-11 PDF

    Contextual Info: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.38 Qg max. (nC)


    Original     		sihb12n60e2002/95/ec11-mar-11 PDF

    SQ2308BES-T1-GE3

    Abstract: SQ2308BES
    Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		sq2308beso-236ot-23aec-q101+32002/95/ecsq2308bes-t1-ge32011/65/eu PDF

    Contextual Info: SQA410EJ www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualified d • 100 % Rg and UIS Tested


    Original     		sqa410ejaec-q1012002/95/ecsc-70-6l-single+3sqa410ej-t1-ge32011/65/eujs709a PDF