S1123 Search Results

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

sir882a

Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 75 RDS(on) () at VGS = 10 V 0.0048 ID (A) • TrenchFET Power MOSFET 120

Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)

234B

Contextual Info: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)

Contextual Info: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a

Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: SUM23N15-73 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.073 at VGS = 10 V 23 0.077 at VGS = 6 V 22.5 • • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature Low Thermal Resistance Package

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC

Contextual Info: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)

Contextual Info: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions

0220S

Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

SI1902CDL

Abstract: marking code pe "Switching diode" 6pin
Contextual Info: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SQJ884EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.28 Qg max. (nC)

Contextual Info: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.38 Qg max. (nC)

SQ2308BES-T1-GE3

Abstract: SQ2308BES
Contextual Info: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: SQA410EJ www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualified d • 100 % Rg and UIS Tested