NPN TRANSISTORS 400V 3A Search Results

UPT521

Abstract: UPT522 UPT523 UPT524 UPT525
Contextual Info: UPT521 UPT522 UPT523 UPT524 UPT525 POWER TRANSISTORS 3 Amp, 400V, Planar NPN FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current: 5A • Turn-on Time: 200ns • Turn-off Time: 900ns DESCRIPTION Unitrode high voltage transistors provide

UPT311

Abstract: SS-050 A UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324
Contextual Info: POWER TRANSISTORS UPT311 UPT312 UPT313 UPT314 UPT315 2 Amp, 400V, Planar NPN UPT321 UPT322 UPT323 UPT324 UPT325 DESCRIPTION FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current; 3A • Turn-on Time: 200 ns • Turn-off Time-. 800 ns Unitrode high voltage transistors provide

TIP54

Abstract: TIP51 TIP52 TIP-52 TIP-54 e40V TIP53 switching ic 5 Amper
Contextual Info: ¿2&M0SPEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP51 TIP52 TIP53 TIP54 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min *3A R ated Collector Current

743 ic

Abstract: JE13009 MJE13009 IC 741 AMP
Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

2N6671

Contextual Info: General ^ Semiconductor Industries, Inc. V tw itch P/tft HIGH POWER NPN 2N6671 2N6672 2N6673 TRANSISTORS NPN 300, 350, 400V 8 AMP SW IT C H IN G tf — 250ns TYPICAL The 2N6673 series of NPN silicon transistors is designed fo r high speed sw itching systems. This unique series features General S em iconductor Industries' C2R®

2SC2612

Contextual Info: Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING

2SC2612

Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage : VCEO=400V Min APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING

2sc2335

Abstract: REGULATOR IC FOR 150V 2SC2335 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A

2SC2553

Abstract: IN 400 DC
Contextual Info: Inchange Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max.@IC=4A APPLICATIONS

BUS21B

Abstract: BUS21C
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS21B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS21B 450V (Min)-BUS21C APPLICATIONS ·Designed for use in converters, inverters, switching

2SC2535

Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications

NPN Transistor 10A 400V

Abstract: MJ13091 dc motor specification MJ13090
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

MJ13071

Abstract: MJ1307 MJ13070 mj130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

2SC2535

Abstract: npn transistors 400V 3A TR10S DC DC converter 5v to 200V ic
Contextual Info: Inchange Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications

2SC2335

Contextual Info: JMnic Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0 s(Max.)@IC=3.0A

2sc2335

Abstract: SUS CIRCUIT
Contextual Info: SavantIC Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A

2SC2335F

Abstract: DC DC converter 400V
Contextual Info: SavantIC Semiconductor Product Specification 2SC2335F Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A

2N5664

Abstract: cc 3053
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,

1498H

Abstract: UPT721 UPT722 UPT723 UPT724 UPT725
Contextual Info: POWER TRANSISTORS UPT721 UPT722 UPT723 UPT724 UPT725 5 Amp, 400V, Planar NPN FEATURES DESCRIPTION • • • • U nitrode h igh voltage tra n sisto rs provide a u niq u e com bination of low saturation voltage, fast sw itching, an d excellent gain. They are ideally suited for off-line power

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • MJ431  10 Amp NPN Silicon Power Transistors 125W Collector-Emitter Voltage: VCEX=400V Min)

2SC3152

Abstract: high frequency npn transistors 400V 3A 1Mhz high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz
Contextual Info: JMnic Product Specification 2SC3152 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥900V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・800V/3A Switching Regulator Applications

2sc3150

Abstract: 200D
Contextual Info: SavantIC Semiconductor Product Specification 2SC3150 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/3A switching regulator applications

2sc3457

Abstract: NPN 800V 200B high frequency npn transistors 400V 3A high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 3a switching regulator
Contextual Info: SavantIC Semiconductor Product Specification 2SC3457 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide ASO Safe Operating Area APPLICATIONS ·800V/3A switching regulator applications