NPN SILICON EPITAXIAL PLANAR TRANSISTOR Search Results

LLE18100X

Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES

epsilam 10

Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

2N5320

Abstract: 2N5321 2N5322 2N5323
Contextual Info: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

2N5320

Abstract: 2N5321 2N5321 THOMSON 2N5322 2N5323
Contextual Info: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR „ DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

MMST2222A

Abstract: MMST2907A
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMST2222A FEATURES z Epitaxial planar die construction. Pb z Complements the MMST2907A. Lead-free z Ultra-small surface mount package. APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are

free IC npn transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

n24 transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are

2N5770

Abstract: T0-92A T092A
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

2N5770

Abstract: T0-92A MICRO ELECTRONICS ltd transistor
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

Silicon NPN Epitaxial Planar Type

Abstract: NPN Silicon Epitaxial Planar Transistor 2SD2098
Contextual Info: 2SD2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE SAT =0.25V

1N3904

Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904
Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.

e50u

Abstract: 2SD2098 BCP2098 NPN Silicon Epitaxial Planar Transistor
Contextual Info: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogan & lead-free Description SOT-89 The BCP2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics

2N1893

Abstract: 100khz 5v transistor npn
Contextual Info: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

MPS6512

Abstract: transistor mps6515 MPS6513 MPS6514 MPS6515 MPS65L5
Contextual Info: .« g NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. E b 'c ABSOLUTE MAXIMUM RATINGS MPS6512/3

BSX79

Abstract: DIN 41876 BSX7
Contextual Info: Nicht für Neuentwicklungen Not for new developments BSX79 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schalter Applications: Switches Features: Besondere Merkmale: • Hohe Strom verstärkung

2N2484

Contextual Info: NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS.

BCP2098

Contextual Info: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. 4 1 FEATURES   2 3

2SA816

Abstract: 2SC1626 BOX69477 COB20 MIPO
Contextual Info: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED

transistor 3569

Abstract: 3569 pN3569
Contextual Info: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE