NPN S2E Search Results

NTE382

Abstract: t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398
Contextual Info: N T E ELECTRONICS INC S2E D • bMaiSS'i QQG2bDS 1SÖ B N T E TRANSISTSRSBUPOLAR I T—33—01 Maximum Breakdown Voltage NTH TVP* Number Polarity and Material Description and Application 362 NPN-Si RF Power Amp P0 = 2W, 4 0 7 -5 1 2MHZ 363 NPN-Si RF Power Amp

Contextual Info: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)

s2e sot-23

Abstract: NPN S2D NPN S2e S2E MARKING IC 74 Q68000-A6479 Q68000-A6483 93 MARKING CODE marking code 93
Contextual Info: PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

2n2222 to92

Abstract: PN2218 2N4970
Contextual Info: NATL SEtlICOND DISCRETE S2E D • NPN General Purpose Transistors by Ascending Part Type V c e o (V ) V c b o (V ) Min Min Min Max (mA/V) 180 110 500 500 500 800 500 500 400 600 400 200 100 200 600 600 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 2/4.5 10/10 2/10 2/10

2SA1344

Abstract: H7q7 2sc339 2SC3398 s2e transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 5SE D0Q73SÔ D 2SA1344. 2SC3398 b • T - 3 7 - 13 T - 3S-I\ PNP/NPN Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances Rl=10ki2, R2=10kil 1236C Application! • Switching circuit, inverter circuit, interface circuit, driver circuit.

marking code 93

Abstract: Q68000-A6479 Q68000-A6483 93 MARKING S2E MARKING MARKING 93 SMBTA43 NPN S2e s2e sot-23
Contextual Info: PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: SMBTA 42, SMBTA 43 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

bta 92

Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation

Contextual Info: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation

SiEMENS PM 350 92

Contextual Info: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN

2SC4003

Abstract: bau 95
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity

pa 2030a

Abstract: 2SC4520 QGQ711G K 2038
Contextual Info: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

2sd209

Contextual Info: SANYO SEMICONDUCTOR 2SB1394, 2SD2099 CORP SSE D • 7 cH 7 0 7 f c i 00072S3 3 T -3 3 -/7 - r 3 3 -0 5 % PNP/NPN Epitaxial Planar Silicon Transistors 2038 Compact Motor Driver Applications 3174 Features • Contains input resistance Ri , base-to-emitter resistance(RBE)

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

2SC4365

Abstract: 2SC4402 SK200
Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V

Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)

2sd1805a

Abstract: 2SD1805
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

IC TA 31101

Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the

transistor kd 2059

Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
Contextual Info: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

NTE130

Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector

tt 3043 Transistor 5 pin type

Abstract: transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC
Contextual Info: N T E ELECTRONICS INC S5E T> bM aiSST DQQEbfl? STS « N T E T-H \-*O I D INDICATORS NTE TVI» No. Description and Application Dtag. NO. «y Per Bag Ind Pkg S ia Typical Viewing Angle Viewed ' Color Typical Maximum (Volts) Breakdown voltage (Vorta) Maximum

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This