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    NPN RF TRANSISTORS Search Results

    NPN RF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet
    TTC5810
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini Datasheet

    NPN RF TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE335

    Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
    Contextual Info: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:


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    NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent PDF

    2N2857 MOTOROLA

    Abstract: DGMOS 2n2857
    Contextual Info: MOT O ROL A SC XSTRS/R F 4bE D t.3b?2S4 oamoeM MOTOROLA ? mOTb " F 3 I - I S SEMICONDUCTOR TECHNICAL DATA 2N2857 The RF Line NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed prim arily for use in high-gain, low-noise am plifier, oscil­


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    2N2857 2N2857 MOTOROLA DGMOS 2n2857 PDF

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2 PDF

    2SC5800

    Abstract: NESG2046M33
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


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    PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TS 2SC5436, 2SC5800) 2SC5436 2SC5800 PU10333EJ02V0DS PDF

    2SC5603

    Abstract: 2SC5676
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor


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    PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676 PDF

    ic 901

    Abstract: 2SC5603 2SC5676 uPA846TC-T1
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor


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    PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1 PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TD 2SC5436, 2SC5800) 2SC5436 2SC5800 P15686EJ1V0DS PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


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    PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS PDF

    2SC5736

    Abstract: 2SC5737 5609 npn transistor marking 2M
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor


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    PA851TC 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 2SC5736 2SC5737 5609 npn transistor marking 2M PDF

    2SC5436

    Abstract: 2SC5668
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)


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    PA844TC 2SC5436, 2SC5668) S21e2 2SC5436 2SC5668 PA844 2SC5436 2SC5668 PDF

    2SC5435

    Abstract: 2SC5437 NEC 2505 nj
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor


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    PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj PDF

    2SC5435

    Abstract: 2SC5786 NEC 7815
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor


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    PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815 PDF

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


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    PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data PDF

    marking 2w

    Abstract: 2SC5600 2SC5737
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)


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    PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737 PDF

    bfy90

    Contextual Info: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER


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    BFX89 BFY90 BFX89 -65IC 800MHz 13-March bfy90 PDF

    2SC5436

    Abstract: 2SC5600 NEC 821
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821 PDF

    2SC5736

    Abstract: 2SC5737 marking VH
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH PDF

    RF POWER TRANSISTOR NPN

    Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
    Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •


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    2SC3628 175MHz 175MHz. RF POWER TRANSISTOR NPN mitsubishi RF POWER TRANSISTOR Mitsubishi databook T-46 PDF

    Contextual Info: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to


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    BFU550XR OT143R BFU550XR AEC-Q101 PDF

    2SC4525

    Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W


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    2SC4525 65GHz. 65GHz X-139 PDF

    8205 6-pin

    Abstract: 2SC5435 2SC5786
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


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    PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786 PDF

    Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


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    BFU520X OT143B BFU520X AEC-Q101 PDF

    mm001

    Abstract: MM8011 MM8010 MM8008 2sc 684 sonde 813 Ghz oscillator
    Contextual Info: M M 8 0 0 8 SILICON MM8010 MM8011 NPN SILICON RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed p rim a rily fo r oscillator, frequency m u ltip lie r, and UH'F a m plifier applications in m ilita ry and industrial equipment. • High Power O u tp u t (Oscillator) —


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    MM8008 MM8010 MM8011 MM8008) MM8010) MM8011) MM8008, mm001 MM8011 MM8008 2sc 684 sonde 813 Ghz oscillator PDF