NPN RF TRANSISTORS Search Results

NPN RF TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet

NPN RF TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE335 Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent Contextual Info: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent	PDF
2N2857 MOTOROLA Abstract: DGMOS 2n2857 Contextual Info: MOT O ROL A SC XSTRS/R F 4bE D t.3b?2S4 oamoeM MOTOROLA ? mOTb " F 3 I - I S SEMICONDUCTOR TECHNICAL DATA 2N2857 The RF Line NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed prim arily for use in high-gain, low-noise am plifier, oscil	OCR Scan	2N2857 2N2857 MOTOROLA DGMOS 2n2857	PDF
2SC5436 Abstract: 2SC5800 uPA863TD-Q2 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2	PDF
2SC5800 Abstract: NESG2046M33 Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor	Original	PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33	PDF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TS 2SC5436, 2SC5800) 2SC5436 2SC5800 PU10333EJ02V0DS	PDF
2SC5603 Abstract: 2SC5676 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor	Original	PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676	PDF
ic 901 Abstract: 2SC5603 2SC5676 uPA846TC-T1 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor	Original	PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1	PDF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) 2SC5436 2SC5800 P15686EJ1V0DS	PDF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS	PDF
2SC5736 Abstract: 2SC5737 5609 npn transistor marking 2M Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor	Original	PA851TC 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 2SC5736 2SC5737 5609 npn transistor marking 2M	PDF
2SC5436 Abstract: 2SC5668 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)	Original	PA844TC 2SC5436, 2SC5668) S21e2 2SC5436 2SC5668 PA844 2SC5436 2SC5668	PDF
2SC5435 Abstract: 2SC5437 NEC 2505 nj Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor	Original	PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj	PDF
2SC5435 Abstract: 2SC5786 NEC 7815 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor	Original	PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815	PDF
2SC5436 Abstract: 2SC5786 4550 nec IC 7432 data Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor	Original	PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data	PDF

marking 2w Abstract: 2SC5600 2SC5737 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)	Original	PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737	PDF
bfy90 Contextual Info: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER	Original	BFX89 BFY90 BFX89 -65IC 800MHz 13-March bfy90	PDF
2SC5436 Abstract: 2SC5600 NEC 821 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821	PDF
2SC5736 Abstract: 2SC5737 marking VH Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH	PDF
RF POWER TRANSISTOR NPN Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC3628 175MHz 175MHz. RF POWER TRANSISTOR NPN mitsubishi RF POWER TRANSISTOR Mitsubishi databook T-46	PDF
Contextual Info: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to	Original	BFU550XR OT143R BFU550XR AEC-Q101	PDF
2SC4525 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W	OCR Scan	2SC4525 65GHz. 65GHz X-139	PDF
8205 6-pin Abstract: 2SC5435 2SC5786 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786	PDF
Contextual Info: 62 7 % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.	Original	BFU520X OT143B BFU520X AEC-Q101	PDF
mm001 Abstract: MM8011 MM8010 MM8008 2sc 684 sonde 813 Ghz oscillator Contextual Info: M M 8 0 0 8 SILICON MM8010 MM8011 NPN SILICON RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed p rim a rily fo r oscillator, frequency m u ltip lie r, and UH'F a m plifier applications in m ilita ry and industrial equipment. • High Power O u tp u t (Oscillator) —	OCR Scan	MM8008 MM8010 MM8011 MM8008) MM8010) MM8011) MM8008, mm001 MM8011 MM8008 2sc 684 sonde 813 Ghz oscillator	PDF

NPN RF TRANSISTORS Search Results

NPN RF TRANSISTORS Result Highlights (5)

NPN RF TRANSISTORS Datasheets Context Search

NTE335

2N2857 MOTOROLA

2SC5436

2SC5800

2SC5603

ic 901

2SC5736

2SC5436

2SC5435

2SC5435

2SC5436

marking 2w

bfy90

2SC5436

2SC5736

RF POWER TRANSISTOR NPN

2SC4525

8205 6-pin

mm001