NPN RF TRANSISTORS Search Results
NPN RF TRANSISTORS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet | ||
TPCP8513 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet | ||
TTC5810 |
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NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini | Datasheet |
NPN RF TRANSISTORS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NTE335
Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
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NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent | |
2N2857 MOTOROLA
Abstract: DGMOS 2n2857
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OCR Scan |
2N2857 2N2857 MOTOROLA DGMOS 2n2857 | |
2SC5436
Abstract: 2SC5800 uPA863TD-Q2
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PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2 | |
2SC5800
Abstract: NESG2046M33
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PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 | |
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor |
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PA863TS 2SC5436, 2SC5800) 2SC5436 2SC5800 PU10333EJ02V0DS | |
2SC5603
Abstract: 2SC5676
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PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676 | |
ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
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PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1 | |
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor |
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PA863TD 2SC5436, 2SC5800) 2SC5436 2SC5800 P15686EJ1V0DS | |
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor |
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PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS | |
2SC5736
Abstract: 2SC5737 5609 npn transistor marking 2M
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PA851TC 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 2SC5736 2SC5737 5609 npn transistor marking 2M | |
2SC5436
Abstract: 2SC5668
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PA844TC 2SC5436, 2SC5668) S21e2 2SC5436 2SC5668 PA844 2SC5436 2SC5668 | |
2SC5435
Abstract: 2SC5437 NEC 2505 nj
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PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj | |
2SC5435
Abstract: 2SC5786 NEC 7815
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PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815 | |
2SC5436
Abstract: 2SC5786 4550 nec IC 7432 data
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PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data | |
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marking 2w
Abstract: 2SC5600 2SC5737
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PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737 | |
bfy90Contextual Info: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER |
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BFX89 BFY90 BFX89 -65IC 800MHz 13-March bfy90 | |
2SC5436
Abstract: 2SC5600 NEC 821
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PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821 | |
2SC5736
Abstract: 2SC5737 marking VH
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PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH | |
RF POWER TRANSISTOR NPN
Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
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OCR Scan |
2SC3628 175MHz 175MHz. RF POWER TRANSISTOR NPN mitsubishi RF POWER TRANSISTOR Mitsubishi databook T-46 | |
Contextual Info: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to |
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BFU550XR OT143R BFU550XR AEC-Q101 | |
2SC4525Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W |
OCR Scan |
2SC4525 65GHz. 65GHz X-139 | |
8205 6-pin
Abstract: 2SC5435 2SC5786
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PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786 | |
Contextual Info: 62 7 % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. |
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BFU520X OT143B BFU520X AEC-Q101 | |
mm001
Abstract: MM8011 MM8010 MM8008 2sc 684 sonde 813 Ghz oscillator
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OCR Scan |
MM8008 MM8010 MM8011 MM8008) MM8010) MM8011) MM8008, mm001 MM8011 MM8008 2sc 684 sonde 813 Ghz oscillator |