NPN POWER TRANSISTOR 100V LIST Search Results

ZXTN19100CZ

Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

Zetex ZXTP19100CZ

Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

100C

Abstract: TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG
Contextual Info: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

ZXTN19100CFF

Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the

Contextual Info: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the

Contextual Info: 2SD2607 Transistors For Power amplification 100V, 8A 2SD2607 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) High hFE by darlington connection.

toshiba 2sd1407a

Abstract: 2SB1016A 2SD1407A
Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A

transistor D600k

Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

2sb631 transistor

Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

transistor D600k

Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Contextual Info: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

ksd73

Abstract: npn power transistor 100v list
Contextual Info: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER TO-220 • Collector-Base Voltage: VCBO = 100V • Collector Current: IC = 5A • Collector Dissipation: PC = 30W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage

Contextual Info: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity

2SB1016A

Abstract: 2SD1407A
Contextual Info: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A

Contextual Info: KSD73 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY HIGH POWER AMPLIFIER • Collector-Base Voltage: V C b o = 100V • Collector Current: lc = 5A • Collector Dissipation: Pc = 30W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic

TS16949

Abstract: ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1
Contextual Info: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain

KSD73

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

LCD TV SMPS circuit

Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Contextual Info: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD USS5550 NPN SILICON TRANSISTOR NPN HIGH-VOLTAGE TRANSISTORS „ DESCRIPTION The UTC USS5550 is a NPN transistor which features low current and high voltage. It is generally suitable for switching and amplification in high voltage applications such as telephone.