NPN 310 Search Results

SO930

Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Contextual Info: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot

transistor SD335

Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen

NPN transistor 2n4400 beta value

Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

T4 3570

Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

NPN TRANSISTOR SMD MARKING CODE B2

Abstract: DFN2020-6
Contextual Info: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 01 — 26 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. PNP complement: PBSS5160DS. 1.2 Features

npn transistor footprint

Contextual Info: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

k 4110

Abstract: Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

k 4110

Abstract: GEOY6976 Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm

Contextual Info: 2014-01-14 Silicon NPN Phototransistor with Daylight - Cutoff Filter NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Version 1.3 SFH 3100 F Features: Besondere Merkmale: • Spectral range of sensitivity: typ 850 . 1100 nm • Special: Narrow half angle

barcode reader circuit

Abstract: barcode reader opto counter fototransistor led k 4110 transistor k 4110 GEOY6976
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm

k 4110

Abstract: GEOY6976 Q62702-P5073 radiant 3100
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm

Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter Lead Pb Free Product - RoHS Compliant SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 850 nm bis 1100 nm

TRANSISTOR 2N 4401

Abstract: NEC 2N4400 2n4401
Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.

Contextual Info: BC 846 . BC 850 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 310 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.

GEO06976

Abstract: Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: SIEMENS NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale

Contextual Info: GH3 光电开关 漫反射型 漫反射板型 对射型 NPN 常开 102 10.30cm 3m 6m GH3-3102NA NPN 常闭 NPN 一开一闭 GH3-3102NB GH3-4102NC 外形编号 检测距离 Sn 具 DC PNP 常开 备 型 PNP 常闭 型 号 GH3-3102ND GH3-3102NE PNP 一开一闭

DSC5002

Abstract: BF200 transistor NC103 DSC-5002 RE03
Contextual Info: DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor NPN Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28