NPN 310 Search Results

NPN transistor 2n4400 beta value

Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN

T4 3570

Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

k 4110

Abstract: Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

k 4110

Abstract: GEOY6976 Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

BUL310

Contextual Info: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED

GEO06976

Abstract: Q62702-P5073
Contextual Info: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: GH3 光电开关 漫反射型 漫反射板型 对射型 NPN 常开 102 10.30cm 3m 6m GH3-3102NA NPN 常闭 NPN 一开一闭 GH3-3102NB GH3-4102NC 外形编号 检测距离 Sn 具 DC PNP 常开 备 型 PNP 常闭 型 号 GH3-3102ND GH3-3102NE PNP 一开一闭

DSC5002

Abstract: BF200 transistor NC103 DSC-5002 RE03
Contextual Info: DSC5002 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DSC5002 Product type: Small Signal Bipolar Transistor NPN Parameters *$ .MODEL DSC5002 NPN + IS=72.000E-15 + BF=200 + NF=1 + VAF=110 + IKF=4.7 + ISE=310.0000E-18 + NE=1.28

Contextual Info: GH3 光电开关 外形编号 漫反射型 漫反射板型 对射型 NPN 常开 NPN 常闭 检测距离 Sn 具 NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 触点输出 号 100 10cm 1m 5m GH3-3100NA GH3-3100NB GH3-4100NC GH3-3100ND

Contextual Info: SIEMENS NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Vorläufige Daten / Preliminary Data Emitter/ *2.<f ; 3.0 geo06976 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

14048

Contextual Info: GH3 光电开关 外形编号 漫反射型 漫反射板型 对射型 NPN 常开 NPN 常闭 检测距离 Sn 具 NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 触点输出 号 104 10cm 1m 5m GH3-3104NA GH3-3104NB GH3-4104NC GH3-3104ND

GH3-4101NF

Contextual Info: GH3 光电开关 漫反射型 漫反射板型 对射型 NPN 常开 101 10.50cm 3m 6m GH3-3101NA NPN 常闭 NPN 一开一闭 GH3-3101NB GH3-4101NC 外形编号 检测距离 Sn 具 DC PNP 常开 备 型 PNP 常闭 型 号 GH3-3101ND GH3-3101NE PNP 一开一闭

Contextual Info: GH3 光电开关 外形编号 漫反射型 漫反射板型 对射型 NPN 常开 NPN 常闭 检测距离 Sn 具 103 10.104cm 4m 8m GH3-3103NA GH3-3103NB NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 触点输出 GH3-4103NC GH3-3103ND

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm

AT-31011

Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Contextual Info: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in

P3596

Abstract: GEXY6710 Q62702-P1673 Q62702-P3595 Q62702-P3596 Q62702-P874
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität

Contextual Info: SIEM ENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm

OS-PCN-2006-015-A

Abstract: GEXY6710 OHLY0598 Q62702-P3596
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

GEXY6710

Abstract: OHLY0598
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)

BCY59

Abstract: BCY58 Transistor BCY58 BCY59X BCY792 BCY59-VIII BCY78 BCY79 transistor bcy58 IX bcy59 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 17 Philips Semiconductors Product specification NPN switching transistors

SC15

Abstract: LTE42008R Data Handbook sc15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor

NPN transistor a777

Abstract: 2SC3103 J55J
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3103 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2S C 3103 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES • High power gain: G peê 6 .7 d B

tm1101

Abstract: schottkydiode schottky-diode schottky transistor npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance