NPN 3010 Search Results

NPN 3010 Result Highlights (5)

Part	Manufacturer	Description	Download
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

NPN 3010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N3511 Contextual Info: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583	OCR Scan	B133167 20min 15min 30min 60min 300typ 150typ 600typ 2N3511	PDF
2N3904DCSM Abstract: 2N2222ADCSM 2N3965 Contextual Info: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039	OCR Scan	2N3680 2N3713 2N3714 2N3715 2N3716 2N3719 2N3720 2N3724 2N3724A 2N3725 2N3904DCSM 2N2222ADCSM 2N3965	PDF
GES5819 Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55	PDF
MPS6531 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20	PDF
mps65 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20MPS6516 MPS6517 mps65 MPSA20	PDF
MPS6566 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA2034 MPS6532 MPS6566 MPSA20	PDF
mpsa65 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA200 MPS3702, mpsa65 MPSA20	PDF
D38L1-3 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 D38L1-3 MPSA20	PDF
MPS6566 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20VES MPS6566 MPSA20	PDF
Q65110A6458 Abstract: GPLY7036 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen im Automobilbereich / not for new designs in automotive applications Vorläufige Daten / Preliminary Data Wesentliche Merkmale	Original		PDF
SFH3010 Abstract: GPLY7036 3010 IF OHPY3832 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen im Automobilbereich / not for new designs in automotive applications Vorläufige Daten / Preliminary Data Wesentliche Merkmale	Original		PDF
gply7036 Contextual Info: 2008-10-17 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 not for new design in automotive applications SFH 3010 Features: Besondere Merkmale: • Spectral range of sensitivity: 420 . 1100 nm • Package: SmartLED (SCD 80), Epoxy, colourless,	Original	D-93055 gply7036	PDF
Marking Code Sorted by Type Abstract: fototransistor led GPLY6089 OHPY1301 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse (SCD 80): (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich	Original		PDF
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Für Neuentwicklungen / for new designs Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm	Original		PDF

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse SCD 80 : (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1100 nm • großer Empfangswinkel ±80°	Original	Q62702-P5555	PDF
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen / not for new designs Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich	Original		PDF
P555 Abstract: GPLY6089 Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse SCD 80 : (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1100 nm • großer Empfangswinkel ±80°	Original		PDF
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen / not for new designs Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich	Original	Q65110A2652	PDF
2N709 Abstract: ic 709 2N3010 Contextual Info: 2N709 2N 3010 SILICON PLANAR NPN U LT R A HIGH-SPEED S ATU R ATED SWITCHES The 2N 709 and 2N 3010 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case. They are designed fo r switching applications up to 50 mA. ABSOLUTE M A X IM U M RATINGS	OCR Scan	2N709 300/is, ic 709 2N3010	PDF
BFR134 Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379 Contextual Info: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar	OCR Scan	BFR134 BFR134 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379	PDF
MLV12-8-H Abstract: IR Sensor transmitter and receiver pair MLV12-8-H-250 H160 VR10 MLV12 ir transmitter led 880nm sensors with response time 0.5ms MLV12-54-G Contextual Info: Photoelectric Sensors MLV12 Series Dura-VueTM Sensors • High-visibility, dual-position indicator LEDs • Thru-hole or dovetail mounting • Extreme low-temperature operation -40ºC/F available 4 output options from 1 sensor: NPN normally open, NPN normally	Original	MLV12 250mm 450mm, OMH-06 MLV12-8-H IR Sensor transmitter and receiver pair MLV12-8-H-250 H160 VR10 ir transmitter led 880nm sensors with response time 0.5ms MLV12-54-G	PDF
IR Sensor transmitter and receiver pair Abstract: MLV12-8-H-250 MV12 MLV12 MA21 MLV12-8-H 650-nm 1mW MLV12-54-G Contextual Info: Photoelectric Sensors MLV12 Series Dura-VueTM Sensors • High-visibility, dual-position indicator LEDs • Thru-hole or dovetail mounting • Extreme low-temperature operation -40ºC/F available 4 output options from 1 sensor: NPN normally open, NPN normally	Original	MLV12 MLV12. MLV12-54-G M12/MV12: M12x1 MLV12-8andMLV12-54) MLV12-54-GandM12/MV12) IR Sensor transmitter and receiver pair MLV12-8-H-250 MV12 MA21 MLV12-8-H 650-nm 1mW	PDF
2322-712 Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor	PDF
BFG134 Abstract: BJE 247 Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	3131S BFG134 OT103 OT103. BFG134 BJE 247	PDF

NPN 3010 Search Results

NPN 3010 Result Highlights (5)

NPN 3010 Datasheets Context Search

2N3511

2N3904DCSM

GES5819

MPS6531

mps65

MPS6566

mpsa65

D38L1-3

MPS6566

Q65110A6458

SFH3010

gply7036

Marking Code Sorted by Type

P555

2N709

BFR134

MLV12-8-H

IR Sensor transmitter and receiver pair

2322-712

BFG134