MA21 Search Results

MA21D380G

Abstract: MA21D38
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D380G Silicon epitaxial planar type For high frequency rectification • Package  IF(AV) = 1 A rectification is possible  Low forward voltage VF  Large non-repetitive peak forward surge current IFSM

TA7302

Abstract: MA711 AF111 F111 MA211 MA2901 SH3015 ma710 TO-99
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-O A28 MAF111, /¿AF211, mAF311, m A111, mA211, mA311 L-O A30 MA139/A, mA239/A, mA339/A, mA775, mA2901, mA7302 L-O A 29 ^AF111, mAF211, mAF311, mA111, mA211, mA311 14 □ 1 nc OUT b | ng O U T a |~ " 13 □ GND 2

ma139

Abstract: mr-r
Contextual Info: FAIRCHILD LINEAR OPERATIONAL AMPLIFIERS Item Q C g Ss p < 1 mA111 Voltage Comparator Strobed Inputs, Single Supply, Low I b 01 0 04 07 200K 2 mA211 Voltage Comparator (Strobed Inputs, Single Supply, Low I b ) 01 0 04 07 200K 3 mA311 Voltage Comparator (Strobed

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D340G Silicon epitaxial planar type For rectification • Features  Package  Forward current (Average) IF(AV) = 1.0 A rectification is possible  Low forward voltage VF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D350G Silicon epitaxial planar type For rectification • Features  Package  Forward current (Average) IF(AV) = 1.0 A rectification is possible  Low reverse current IR

Contextual Info: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx××G/MA22D×××G Series „ Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power

MA21D382

Abstract: MA21D38 MA21D382G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D382G Silicon epitaxial planar type For high frequency rectification • Package  IF(AV) = 1.5 A rectification is possible  Low forward voltage VF  Large non-repetitive peak forward surge current IFSM

MA21D38

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D38 Silicon epitaxial planar type For high frequency rectification Unit: mm 1.25±0.10 0.58+0.02 –0.03 0.60±0.10 • Features 1.90±0.10 VR 30 V Maximum peak reverse voltage

MA21D350

Abstract: MA21D35 MA21D350G SMini2-F2
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D350G Silicon epitaxial planar type For rectification • Package  Forward current (Average) IF(AV) = 1.0 A rectification is possible  Low reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D380G Silicon epitaxial planar type For high frequency rectification  Features • Package  IF(AV) = 1 A rectification is possible  Low forward voltage VF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D35 Silicon epitaxial planar type For rectification Unit : mm 1.25±0.10 • Features 0.58+0.02 –0.03 0.60±0.10  Forward current (Average) IF(AV) = 1.0 A rectification is possible

Contextual Info: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series „ Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D380G Silicon epitaxial planar type For high frequency rectification  Features • Package  IF(AV) = 1 A rectification is possible  Low forward voltage VF

A139

Abstract: MA710 A339 A7302 ma78mg MA339 ja311 jua311 AF111 F111
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA28 MAF111, /¿AF211, mAF311, mA111, mA211, mA311 L-OA30 MA139/A, mA239/A, mA339/A, mA775, mA2901, mA7302 L-OA29 ^AF111, mAF211, mAF311, mA111, mA211, mA311 14 □ 1 nc O UT b | ng OUT a | ~ " 13 □ GND 2 12 □

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D350G Silicon epitaxial planar type For rectification • Package  Forward current (Average) IF(AV) = 1.0 A rectification is possible  Low reverse current IR

Contextual Info: MA2101QB Dual General Purpose Operational Amplifier FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The /j A2101QB is a dual general purpose monolithic oper­

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D38 Silicon epitaxial planar type For high frequency rectification Unit: mm 1.25±0.10 0.58+0.02 –0.03 0.60±0.10 • Features Maximum peak reverse voltage

MA21D38

Abstract: MA21D380G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D380G Silicon epitaxial planar type For high frequency rectification • Package  IF(AV) = 1 A rectification is possible  Low forward voltage VF  Large non-repetitive peak forward surge current IFSM

Invensys speed sensor

Abstract: MA215HT 202F 204D 400F
Contextual Info: 3/8 1/2 M12* MA215HT MA315HT SEALED FRONT-END HI-TEMP VRS SENSORS METERS / SECOND 2.5 5.1 7.6 10.1 12.7 15.2 17.8 20.3 22.9 25.4 60.0 52.5 45.0 37.5 V P/P 30.0 22.5 15.0 7.5 100 200 300 400 500 600 700 800 900 1000 INCHES / SECOND FOR HIGH TEMPERATURE SPEED SENSING APPLICATIONS IN WHICH THE SENSOR TIP IS EXPOSED TO

10105BEA

Contextual Info: MA2101QB Dual General Purpose Operational Amplifier F A IR C H IL D A Schtum berger Com pany MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The ¿iA2101QB is a dual general purpose m onolithic oper­

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D382G Silicon epitaxial planar type For high frequency rectification • Package  IF(AV) = 1.5 A rectification is possible  Low forward voltage VF  Large non-repetitive peak forward surge current IFSM

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D340G Silicon epitaxial planar type For rectification • Package  Forward current (Average) IF(AV) = 1.0 A rectification is possible  Low forward voltage VF

CT 0.4-TP

Abstract: MA21D38
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D38 Silicon epitaxial planar type For high frequency rectification Unit: mm 1.25±0.10 0.58+0.02 –0.03 0.60±0.10 • Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA21D380G Silicon epitaxial planar type For high frequency rectification • Package  IF(AV) = 1 A rectification is possible  Low forward voltage VF  Large non-repetitive peak forward surge current IFSM