NPN 300 VOLTS VCE POWER TRANSISTOR Search Results

Contextual Info: MMBTA42-AU NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • • • • • Collector current IC = 500mA Acqire quality system certificate : TS16949

Contextual Info: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives

MMBTA42

Contextual Info: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic

TRANSISTOR a4w

Contextual Info: MMBTA42W NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 150 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .

TRANSISTOR a4w

Abstract: marking a4w a4w transistor a4w sot a4w marking code a4w marking a4w 55
Contextual Info: MMBTA42W NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 150 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .

ZTX657

Abstract: ZTX656 DSA003772
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10

ZTX454

Abstract: ZTX455
Contextual Info: ZTX454 ZTX455 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ns 900 0.4 tr ns 500 800 400 700 300 600 ts µS Switching time VCE sat - (Volts)

2N1016

Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
Contextual Info: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8

MJD122T4G

Abstract: TRANSISTOR MJD122
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

21E sot

Abstract: IC 3263 1303 SOT23
Contextual Info: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

Contextual Info: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

Contextual Info: PNP MJ11021 (NPN) MJ11022 Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. http://onsemi.com • High dc Current Gain @ 10 Adc − • • •

BDW42G

Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

100 amp npn darlington power transistors

Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS

tip120tip122

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features

Contextual Info: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design

transistor data

Abstract: npn transistor data CHIP transistor 348
Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2060J • JANTX level (2N2060JX)

MJD127T4

Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features

828 npn

Abstract: MPS6523
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

mj14002

Abstract: mj14003
Contextual Info: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •

SEMICOA SEMICONDUCTORS

Abstract: 2N2060 2N2060J 2N2060JV 2N2060JX 2N2060 JAN npn transistor data MIL-STD-750 2072
Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2060J • JANTX level (2N2060JX)