NON-VOLATILE RAM Search Results

HC71

Contextual Info: Honeywell NON-VOLATILE RAM Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1 E15 cycles) • CMOS Input Levels (TTL Optional)

HC7464

Abstract: TTL 7464
Contextual Info: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention

Contextual Info: b3E D 4SS1Ô72 DDDIGTS HONEYI i l ELL / S NON-VOLATILE RAM Honeywell IH0N3 Ô2fl S E C Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1E15 cycles)

for atmel 416 24c16 an

Abstract: low cost eeprom programmer circuit diagram 93C461 how to reset atmel 24c16 24w04 program 24c04 CHIP 8-PIN 24c16 93c566 24w02 93CS561 93C46A1
Contextual Info: Non-Volatile Memory Products Non-Volatile Memory Products Package Dimensions Table of Contents EEPROM Standard Products Family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184

TTL 7464

Contextual Info: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles)

GR3281

Abstract: ram 62256 43256 43256 static ram 55257 62256 55257 RAM 62256 RAM STATIC RAM 62256 16 STATIC RAM 62256
Contextual Info: GR3281 32K x 8 NON-VOLATILE RAM GR3281 (32K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR3281 is a 32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

S2212R

Contextual Info: SEIK O INSTRUMENTS U.S.A., INC. 2990 W. Lomita Blvd. Torrance, California 90505 213 530-8777 S-2212R 256 Word X 4 Bit NON-VOLATILE CMOS STATIC RAM S-2212R is a Non-Volatile CMOS Memory, one to one combination of static MOS RAM and Non-Volatile Electric Erasable Programmable Read Only

S-22S12I

Abstract: S-22S12R X2212 seiko s22s
Contextual Info: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and

SK 8051 S

Abstract: X2444 S24S45 S-24 S-24H30 S-24H45 S-24S30 S-24S45
Contextual Info: S-24 Series SERIAL NON-VOLATILE RAM The S-24 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. and The organization is 16-word x 16-bit (total 256 bits) for the S-24H45 and

arm microprocessor data sheet

Abstract: M68HC912DG128 MICROPROCESSOR 68000 manual MON08
Contextual Info: HI-WAVE NVMC Non Volatile Memory Control Utility Copyright 1998 HIWARE HI-WAVE Product Manual Manual Date HI-WAVE - Non Volatile Memory Control Utility 07/98 © Copyright 1998 HIWARE HI-WAVE Table of Contents 3 Contents Non Volatile Memory Control Utility . . . . . . . . . . . . . . . . . . . . 5

TFT MOBILE DISPLAY I2C interface

Abstract: TFT LCD display Human Machine Interface schematic lvds 20 pin lcd panel
Contextual Info: LM8342 LM8342 Programmable TFT V COM Calibrator with Non-Volatile Memory Literature Number: SNOSAM0A LM8342 Programmable TFT VCOM Calibrator with Non-Volatile Memory General Description Features The LM8342 is an integrated combination of a non-volatile register 7 bits EEPROM and a DAC controlled current

M34C02-L

Abstract: 24LC21 M24164 M24164-W M34C02 M34C02-W ST24FC21 ST24FW21 ST24LC21 SPECIFIC CUSTOMIZED DEDICATED SOLUTIONS
Contextual Info: Applications Specific Standard Products Serial Non-Volatile Memories www.st.com/eeprom Optimized solution offer ASSPs are built on a common non-volatile memory technology platform, allowing a non-volatile memory core to be combined with dedicated logic on the same chip. ASSPs include serial industry standard I2C,

LPC1700

Abstract: LPC1100 LPC1300 LPC2000
Contextual Info: AN11008 Flash based non-volatile storage Rev. 1 — 5 January 2011 Application note Document information Info Content Keywords Flash, EEPROM, Non-Volatile Storage Abstract This application note describes the implementation and use of a library that allows on-chip flash memory to be used for non-volatile storage, in a

Non-Volatile RAM

Contextual Info: NON-VOLATILE RAM PRODUCTS DATABOOK 2nd EDITION MARCH 1998

Contextual Info: LOW-COST NON-VOLATILE INFINITELY RECONFIGURABLE PLD MachXO Family Crossover Programmable Logic Devices The MachXO family of non-volatile, infinitely reconfigurable Programmable Logic Devices PLDs is designed for applications traditionally implemented using

motorola transistor cross reference

Abstract: 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note
Contextual Info: Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with

FeRAM

Abstract: interfacing sram and dram PZT material Wordwise universal eeprom
Contextual Info: FeRAM Memory What are ferro-electric RAMs ? are are non-volatile non-volatile memories memories like (like Flash Flash) have have aa DRAMs DRAMs read/write read/write performance performance •• •• have have low low voltage voltage // low low power

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

disadvantages 68hc12

Abstract: 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12
Contextual Info: Freescale Semiconductor Order this document by AN1837/D Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with

multiplexer 64

Abstract: 31x31-mm
Contextual Info: IN-SYSTEM PROGRAMMABLE GATE ARRAY Non-Volatile Instant-On Infinitely Reconfigurable ispXPGA Non-Volatile Infinitely-Reconfigurable Instant-On FPGAs Key Features and Benefits The World’s First FPGA to Offer Non-Volatility and Reconfigurability The ispXPGA family of devices allows the creation of

"programmable capacitor"

Abstract: X90100 X90100M8I X90100M8IT1 X9315 FN8156
Contextual Info: X90100 Data Sheet February 2, 2005 NV Electronically Programmable Capacitor FN8156.0 Features • Non-volatile EEPROM storage of programmed trim codes The Intersil X90100 is a non-volatile electronically programmable capacitor. The device is programmed through

68HC12

Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
Contextual Info: MOTOROLA Order this document by AN1837/D SEMICONDUCTOR APPLICATION NOTE Non-Volatile Technology Memory Overview By Stephen Ledford Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford

FeRAM

Abstract: PTSC0007 BUT 11 Transistor .2t transistor equivalent transistor "Ferroelectric RAM" stmicroelectronics eeprom TRANSISTOR EQUIVALENT world transistor equivalent and data
Contextual Info: CARTES 2000 State-of-the-art Non-Volatile Memories for Contactless Products Didier GRENIER Business Unit Director – Transport & ID Smart Chips MPG - PTSC0007 - 009 - 1 STMicroelectronics Summary Introduction to Non-Volatile Memories technologies EEPROM technology

Contextual Info: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM