DDD10D Search Results

CLT2130

Abstract: CLT2160 CLT2150 CLT2140 T018
Contextual Info: L 40E » Ea DDD10D3 7 SENI "P41-UÌ FASCO INDS/ SENISYS CLT2130 CLT2140 CLT2150 G.r CLT2160 Silicon Planar Epitaxial Phototransistors ±.007 f— J83 N A — H J WINDOW [ I n t.o n H— ±.oio .0 4 0 i I .147 O I A _ 1 GENERAL DESCRIPTION — The Clairex CLT2130,

TTL 7464

Contextual Info: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles)

Contextual Info: OMD75N06ML OMD38L60ML OMD6ONIOML OMD32F6QML Preliminary Data Sheet 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules With Internal Gate Drive, 3-Phase Bridge Configuration FEATURES • • • • •