NOF DIODE Search Results

7404

Contextual Info: SK20MLI066 ?- M XQ Y$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$ZK ?[ M XQ Y$ @$ ?[ M P]Q Y$ @$_` *'-) VNN L GN C ?- M ]N Y$ X^ C ^N C a XN L ?[ M PQN Y$ V e- ?- M XQ Y$ GN C ?- M ]N Y$ X^ C ^N C ?[ M PQN Y$ fQ C ?- M XQ Y$

Contextual Info: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on

SM 91A

Contextual Info: SPECIFICATION SILICON DIODE TYPE NAME : E RW O 4 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co., Ltd. This Sp ecification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric Co^Lici. CHECKED 1/6 Y 0257-R-004a 22307^2 DDDSTbû 5T7

Contextual Info: SKiiP 23NAB126V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L;CS .; .;1X L/CS & Q GF R;O 4+8*&& 2'-* 79&* &@*,969*5 (& Q GF VNTW R; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& Q GF VNTW R; .$ .$1X (Z

MOC211

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC211 MOC212 M OC213 Sm all Outline O ptoisolators [CTR - 2 0 % Min] Transistor Output {CTR = 6 0 % Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 5 - 0 6 0 . SPEC. No. DATE F u j i E l e c t r i c Co., Ltd, This S p e c ific a tio n is subject to change without notice. D ATE DRAWN, NAME APPROVED Fuji Electric CaJLid. CHECKED I 1/6 H04-004-07

d223 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD223 Darlington Output [CTR > 500% Min] The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington

MOC215

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC215 MOC216 MOC217 Small Outline Optoisolators [CTR e 20% Min] Transistor Output Low Input Current [CTR = 50% Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,

Contextual Info: MW PLP-20 I mean WEiin 20W Single Output LED Power Supply series 1Features: Universal AC input / Full range up to 277VAC Built-in constant current limiting circuit with adjustable OCP level Protections ¡Short circuit/Over load/Over voltage/Over temperature

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VDE UL CSA SETI BS ® SEMKO DEMKO N EM KO BABT MOC8080 [CTR » 500% Min] 6-Pin DIP Optoisolator High Tem perature Darlington Output STYLE 1 PLASTIC The MOC8O8O device consists ot a gallium arsenide infrared emitting diode optically

OPB 813

Contextual Info: ^ O TO RO LA SEMICONDUCTOR TECHNICAL DATA Order this document by OPB 86O/D Advance Information OPB86O OPB870 Slotted O ptical Sw itches Transistor Output These slotted switches each consist of a gallium arsenide infrared light emitting diode facing a silicon NPN phototransistor in a plastic housing. The devices are separated by a

Contextual Info: Light Emitting Diodes LED lamps LED lamps •Overview In recent years, electronic instruments have under­ gone a striking improvement in reliability due to the in­ creased use of solid state and integrated circuitry. As a result, increasingly higher reliability is demanded of

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 D S D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e V DS 100 V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t NOR G ate M C74LVX02 W ith 5 V -T o lera n t Inputs The MC74LVX02 is an advanced high speed CMOS 2-input NOR gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t AND G ate M C74LVX08 W ith 5 V -T o lera n t Inputs The MC74LVX08 is an advanced high speed CMOS 2-input AND gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.

Contextual Info: MOTOROLA O rder this docum ent by M OC8080/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT MOC8O8O G lobalO ptoisolator 6 -P in DIP Optoisolator [C TR = 500% Min] Darlington Output M otorola Preferred Device T he MOC8O8O de vice con sists of a ga llium arse nide infrared em itting diode

Contextual Info: SK30MLI066 ?- M XQ Y$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$ZK ?[ M XQ Y$ @$ ?[ M P]Q Y$ @$_` *'-) VNN L ^N C ?- M ]N Y$ GP C VN C a XN L ?[ M PQN Y$ V e- ?- M XQ Y$ G] C ?- M ]N Y$ GN C VN C ?[ M PQN Y$ PVN C ?- M XQ Y$

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-In p u t NAND G ate M C74LVX00 W ith 5 V -T o lera n t Inputs The MC74LVX00 is an advanced high speed CMOS 2-input NAND gate. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.

DIODE JS4

Abstract: MB2841 MB2841BB 2q270
Contextual Info: NAPC/DHILIPS SEMICOND bSE ]> • OOfibbOh ST3 m $ I C 3 Philips Semlconductors Advanced BiCMOS Products Product spécification Dual10-bit bus interface latch 3-State MB2841 FEATURES • Output capability: +64mA/-32mA • High speed parallel latches • Latch-up protection exceeds 500mA per

Contextual Info: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a

Contextual Info: MP87099 m CM OS Very Low Power 10-Bit, Analog-to-Digital Converter with 8-Channel Mux Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • • 10-Bit Resolution Sampling Rates from <1 kHz to 1 MHz DNL better than 1/2 LSB typ up to 750 kHz

BECKMAN 332

Abstract: DDD7003 HP5082-2835 MP8799 MP8799AE
Contextual Info: MP8799 CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux BENEFITS FEATURES • • • • 10-Bit Resolution 8-Channel Mux Sampling Rates from <1 kHz to 1 MHz Very Low Power CMOS - 30 mW typ Power Down; Lower Consumption - 3 mW (typ)

fireberd 6000 service manual

Abstract: diode lt 54 fireberd 6000 ei 33 u 68HC705C8 MC68HC705C8 68HC05 EIA-232 MC145480 MC145572
Contextual Info: MOTOROLA Order this document by MC145572EVK/D SEMICONDUCTOR TECHNICAL DATA Advance Information MC145572EVK ISDN U-Interface Transceiver Evaluation Kit This document contains information on a new product. SpeciÞcations and information herein are subject to change without notice.

UV diode

Contextual Info: Tbl» material and the Information htr«1n 1« lh« property of Fyjr SleclrEc Co.»Ud. Th«y shall bo n«llh«r reproducid, copiad, font, or dfscfosod In any way whatsoever for Ih« u*« of any third party tior u»ed lor lh« manufacturing purpose» without