NJ SOT23 Search Results

marking NJ

Abstract: nJ SOT23 KRC109S
Contextual Info: SEMICONDUCTOR KRC109S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NJ No. 1 Item Marking Device Mark NJ KRC109S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

diode wg

Abstract: N2 SOT-23 SOT-89 N2 transistor dg sot-23 sot23 xj
Contextual Info: Package and Die Options TO-39 N2 TO-92 (N3, L, LL) DIP Plastic (N6, P) DIP Ceramic (NC, C) Side Braze (NC) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) Die in Wafer Form (NW, XW) Die on adhesive tape (NJ, XJ) Die in Waffle Pack (ND, X)

bcp55 to

Abstract: bcp55 BCV72-K8 BC859C BC860C BCP52 BCP53 BCP54 BCP56 BCV26
Contextual Info: This I Material cr tn ab Pro Electron Surface Mount Bipolar Devices -1 fc-1 UJ CD Copyrighted a□ jr □ In nj -c: ru j] Device No. SOT-23 Mark I ' ces * 'CBO v h fe V CB (nA) Max (V) hfe Min @ Max 'c & VcE (mA) (v) V GE(SAT) & Max BE(SAT) . w V BE(ON)

diodes SY 200

Abstract: ZC930
Contextual Info: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSU E 4 - JUNE 1996 O FEATURES * VHP Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V APPLICATIONS * Mobile Radios and Pagers

Contextual Info: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder

Contextual Info: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MMBR911L Silicon NPN RF Transistor DESCRIPTION • High Gain GNF = 17 dB TYP. @ lc= 10 mA, f = 500 MHz • Low Noise Figure NF= 1.7dB TYP. @ f= 500 MHz

2SC5890

Contextual Info: JEIIZU , Line. C/ 20 STERN AVE. SPRINGFIELD, .NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor 2SC5890 UkSUKIKMUN >"4|^^ • High Gain Bandwidth Product SOT-23-3L package fT = 7.8 GHz TYP. • High power gain and low noise figure ;

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

Contextual Info: ^zmi-donductoi ^Products., Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN2484 MMBT2484 TO-92 SOT-23 B Mark:1U Absolute Maximum Ratings* TA = 25PC unless otherwise noted Parameter Symbol

T3D2

Contextual Info: Supertex inc. HV3418 64-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Gullwing 80-Lead Quad Plastic Gullwing Die HV3418 180V HV3418DG HV3418PG

SMBD2837

Abstract: 550 SOT143 br sot-143 SMBD2836
Contextual Info: Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W

cd 1691 cp

Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz

ams SOT23

Contextual Info: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on

RS468

Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Contextual Info: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive

12W Sot23

Abstract: 12W SMD SOT23 12w sot-23 sot-23 12w TA 7698 AP Micro SOIC8 sot23 12W LM3500 FBGA-49 SOT23 M7
Contextual Info: LM2796 a * f lM S t t n m * ä 6 = c a n iH ! àm m m m • t o j» i = s i s K m m m i £ 20 mA • m1 ENA & ENB > U l f i M M ä t # • f f a t m 3/2 « m s 2.7V M 5.5V • JJIt«r^ÄI«Ä(PWM)^ÄSf!|: • 100 Hz M 1 kHz i 8 ü m micro SMD 2.1 mm x 2.4 min x 0.6 mm

PH C5V1

Abstract: C5V6 ph PH C6V2 ic SMD MARKING CODE ad 5.9 C8V2 PH ph c8v2
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification File under Discrete Semiconductors, SC01 Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series PINNING FEATURES • Total power dissipation: max. 250 mW

Contextual Info: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current

dialight light pipe

Abstract: 597-5312-407 597-5412-407 597-5004-407
Contextual Info: NEW 2.54mm Round OptopipeTM Optical Light Pipe, 4 Array 44.45 [1.75] REF 1.02 [.040] TYP 13.97 [.550] 13.97 [.550] 13.97 [.550] Ø 2.54 [.100] TYP; 4 PLACES 3.00 [.118] REF FRONT PANEL 515-1030 DIRECTION OF LIGHT 12.19 [.48] 6.10 [.240] Ø 1.60 [.063]

microgate

Contextual Info: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder

MMBT3904LT1

Abstract: 9B SOT23
Contextual Info: Hnnnm SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITER FEATURES 3. COLLECTOR Power dissipation 0-2 Pcm: 2.4 W (T am b=25t) Collector current I CM: 0 .2 A Collector-base voltage 60 V Operating and storage junction temperature range

IPC-600E

Abstract: nj TRANSISTOR 610B ASTM-B16-85 TRANSISTOR SUBSTITUTION HASL surface mount to dip adapter
Contextual Info: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder

Contextual Info: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder

DS7201

Abstract: sot23-6 marking code SOT23-6 MARKING 02 TDFN-6 EUP7201 USP-6 MARKING NT SOT23
Contextual Info: EUP7201 Dual ,Low-Noise,150mA LDO Regulator DESCRIPTION FEATURES The EUP7201 is highly accurate, Dual, low noise, CMOS LDO voltage regulator. Performance features include low output noise, high ripple rejection ratio, low dropout and very fast turn-on times.