NIHON INTER Search Results

Contextual Info: October 12, 2012 Nihon Dempa Kogyo Co., Ltd. President: Hiroshi Takeuchi Compact, low-profile, high-performance 920 MHz band SAW filter for HEMS appliances and smart meters developed Nihon Dempa Kogyo Co., Ltd. has developed a compact, high-performance 920 MHz band SAW

Contextual Info: NEWS RELEASE Contact: Kazuhiko Hoshino NIHON DEMPA KOGYO CO., LTD. Phone: +81-3-5453-6736 e-mail: hoshino@ndk.com “New biomolecular interaction QCM analyzers NAPiCOS series with new twin sensor will be showcased at Pittcon 2012 NIHON DEMPA KOGYO CO., LTD will showcase its new biomolecular interaction analyzers, “NAPiCOS” with

Contextual Info: December 6, 2012 Hiroshi Takeuchi President & representative director Nihon Dempa Kogyo Co., Ltd. Development of compact light Crystal Sensor module detecting gravity, acceleration, declination, displacement with high sensitivity and wide dynamic range Nihon Dempa Kogyo Co., Ltd., a crystal device manufacturer, announces that the company

Contextual Info: September 24, 2014 Nihon Dempa Kogyo Co., Ltd. President: Hiroshi Takeuchi New product developed; Smaller VCXO 5.0 x 3.2 mm with high-frequency range and low phase noise, for base stations and optical network devices Nihon Dempa Kogyo Co., Ltd. (NDK) has developed a new compact high-performance

Contextual Info: June 25, 2015 Nihon Dempa Kogyo Co., Ltd. Representative Director & Chairman of the Board, President and CEO Toshiaki Takeuchi Development of DuCULoN – an ultra-low-phase-noise crystal oscillator for high-end digital audio device master clocks Nihon Dempa Kogyo Co., Ltd. NDK has developed DuCULoN®*1 – an

MB111

Abstract: marking JB SCHOTTKY BARRIER DIODE 25CC
Contextual Info: 10A120VTm150V Fully Molded similar to TO-220AC FSHS10A12 ft«» Nihon Inter Electronics Corporation Specification yT y i/ayh Construction Schottky Barrier Diode Application High Frequency Rectification 1 j ir—K MAXIMUM RATINGS Ta=25'C: Unless otherwise specified

10a45

Abstract: marking WMM
Contextual Info: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

FCQS30A045

Contextual Info: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification

TM 5503

Abstract: UCU20C20 co140 5S24
Contextual Info: 20A 200V 31ns Similar to TO-263 # y — Fast Recovery Cathode common UCU20C20 ttif* Nihon Inter Electronics Corporation Specification. mm fr d Construction Diffusion Type Silicon Diode iWi/ r I implication High Frequency Rectification MAXIMUM RATINGS T a= 2 5 t: Unless otherwise specified

5A45V

Abstract: FSHS05A045 1331C FC7 marking
Contextual Info: 5A45VTm150V ' Ííj J'¡L Fully Molded similar to TO-220AC ' FSHS05A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 -y T Schottky Barrier Diode Application High Frequency Rectification fflìÉ ÿA Jr-Y MAXIMUM RATINGS Ta—25 C- Unless otherwise specified

diode 1G8

Abstract: nihon diode 1G8
Contextual Info: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

Nihon Inter Electronics

Contextual Info: Safe Using on NIEC Products In the interest of product improvement, Nihon Inter Electronics Corporation NIEC reserves the right to change specifications without notice, and so use of the updated version of Date Book or Specifications and Catalog are requested.

l55a

Abstract: T0220AB
Contextual Info: # y ~ F = i^ e > - 8A 35VTjw150V S B D Fully Molded similar to TO-22QAB Cathode common FCQS08A035 tttis 0 * ^ f c ïtè tt Nihon Inter Electronics Corporation Specification. s' Construction ilii Application Schottky B arrier Diode H igh Frequency Rectification

FSQS15A045

Abstract: 118T
Contextual Info: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified

UCU20C30

Abstract: marking WMM UCU20C
Contextual Info: # y— Fast Recovery Cathode common 20A 300V 33ns UCU20C30 Similar to TO-263 i± m m Nihon Inter Electronics Corporation Specification. FRD Construction ff lìÉ Application Diflusion Type Silicon Diode High Frequency Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

FCHS20A

Abstract: WH 1602 K FCHS20A045 RECT18
Contextual Info: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification

fcqs10a045

Abstract: 10a45 IMTIA
Contextual Info: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified

DIODE w2x

Contextual Info: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

Contextual Info: nil Nihon Inter Electronics Corporation 1.7A Avg 100 Volts ~X SBD EA20QS10 EA20QS10-F ) (~ MAXIMUM RATINGS •OUTLINE DRAWING(mm) ' ' ' Type S y m b o r\^ Rating < v> & L l -}ifi ',ti h. Repetitive Peak Reverse Voltage f- fl* i/i P.C.Board mounted * Average

Contextual Info: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V

Diodo Schottky

Abstract: DIODO
Contextual Info: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

FSQS05A065

Contextual Info: 5A 65V Tm 150V FulfyMoHeä similar to TO-220AC FSQS05A065 tt« * 0 * ^ Nihon Inter Electronics Corporation Specification. Construction ’> 3 y h 3 r — /< V 7 y 4 3 r — K Schottky Barrier Diode Application High Frequency Rectification MAXIMUM RATINGS T a= 25 C: Unless otherwise specified